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High Quality Silicon Epitaxy In An Ultra High Vacuum Rapid Thermal Cvd Reactor: An Application to Single Wafer Processing

Published online by Cambridge University Press:  21 February 2011

Mahesh K. Sanganeria ,
Katherine E. Violetite  and
Mehmet C. ÖztÜrk
Mahesh K. Sanganeria
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
Katherine E. Violetite
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
Mehmet C. ÖztÜrk
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering, Box 7911, Raleigh, NC 27695-7911
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Abstract

In this paper, we report epitaxial growth of silicon in an ultra high vacuum rapid thermal chemical vapor deposition (UHV/RTCVD) equipment. In this study, our objectives were low temperature/low thermal budget processing and a high throughput compatible with single wafer manufacturing. The reactor consists of a load lock, a main process chamber and an intermediate cryopumped vacuum buffer chamber between the two chambers. An ultra-clean process environment was achieved using oil free pumps and point of use gas purifiers. The wafer is heated by a Peak Systems LXU-35 arc lamp through a quartz window. In this system, we achieved good quality silicon epitaxy at low temperature (T≤800°C) in the very low, 100 mTorr, pressure regime with high throughput (Growth rate>0.25 μm/min.). High growth rate was achieved using Si2H6 as the reactant gas instead of SiH4 or SiH2C12 which are more commonly used gases for epitaxial growth. High temperature in-situ cleaning was completely eliminated by initiating film growth on a hydrogen passivated surface obtained via dilute HF etching. Generation lifetimes in the 200-400μs range were measured for deposition temperatures of 700°C, 750°C and 800°C with no strong dependence on the deposition temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 25
Copyright
Copyright © Materials Research Society 1993

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