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High Performance Polysilicon Thin Film Transistors

Published online by Cambridge University Press:  21 February 2011

U. Mitra ,
B.A. Khan ,
M. Venkatesan ,
A. Carlson  and
M. Vaez-Iravani
U. Mitra
Affiliation:
E.Stupp Philips Laboratories, A Division of North American Philips Corporation 345 Scarborough Road, Briarcliff Manor, N.Y. 10510.
B.A. Khan
Affiliation:
E.Stupp Philips Laboratories, A Division of North American Philips Corporation 345 Scarborough Road, Briarcliff Manor, N.Y. 10510.
M. Venkatesan
Affiliation:
E.Stupp Philips Laboratories, A Division of North American Philips Corporation 345 Scarborough Road, Briarcliff Manor, N.Y. 10510.
A. Carlson
Affiliation:
E.Stupp Philips Laboratories, A Division of North American Philips Corporation 345 Scarborough Road, Briarcliff Manor, N.Y. 10510.
M. Vaez-Iravani
Affiliation:
E.Stupp Philips Laboratories, A Division of North American Philips Corporation 345 Scarborough Road, Briarcliff Manor, N.Y. 10510.
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Abstract

Polysilicon TFT characteristics are shown to be dependent on the nature of the polysilicon film used as well as the TFT fabrication process. Best results were obtained when silicon self-implant and regrowth techniques were used together with plasma hydrogenation. TFTs exhibiting a mobility of 115 cm2/V-sec, subthreshold slope of 0.27 V/decade, leakage current below 0.01 pA/μ;m, and an on-off ratio of 10 orders of magnitude have been fabricated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 381
Copyright
Copyright © Materials Research Society 1990

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References

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