Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-23T15:25:08.908Z Has data issue: false hasContentIssue false
  • English
  • Français

HfOx Thin Films for Resistive Memory Device by Use of Atomic Layer Deposition

Published online by Cambridge University Press:  01 February 2011

Pang Shiu Chen ,
Heng-Yuan Lee ,
Ching-Chiun Wang ,
Ming-Jinn Tsai  and
Kou-Chen Liu
Pang Shiu Chen
Affiliation:
[email protected], MingShin University of Science and Technology, Materials Science and Engineering, 1 Hsin-Hsing Road, HSIN-FONG ,, HSIN-CHU, 30401, Taiwan, 886-3-5593142 ext 3377, 886-3-5593142 ext 3377
Heng-Yuan Lee
Affiliation:
[email protected], Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute,, Chutung,, HsinChu, 304, Taiwan
Ching-Chiun Wang
Affiliation:
[email protected], Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute,, Chutung, Hsinchu, 304, Taiwan
Ming-Jinn Tsai
Affiliation:
[email protected], Electronics and Optoelectronics Research Laboratory, Industrial Technology Research Institute,, Chutung, Hsinchu, 304, Taiwan
Kou-Chen Liu
Affiliation:
[email protected], Chang Gung University, Department of Electronic Engineering, Tao-Yuan, 333, Taiwan
Get access

Abstract

The materials properties and resistance switching characteristics of hafnium oxide-based binary oxide were investigated for next generation memory device application. A nonstoichometric hafnium oxide (HfOx) film with a mixture structure of monoclinic and tetragonal phase and some metallic Hf-Hf bonds on TiN/Si were prepared by atomic layer chemical vapor deposition (ALCVD). Resistance random access memory devices consisting of Pt/HfOx/TiN/Si with low power operation (< 0.4 mW) and reset current (< 100 mA) were fabricated. The resistance ratio of high resistance state to low resistance state maintains 100∼1000 and after 1000 cycles of repetitively switching. A 1-nm-thick Al2O3 film in the interface between top electrode and HfOx films, the Pt/Al2O3/HfOx/TiN/Si memory devices were found that soft-error of set and reset process often occurred. Interface states in the anode side play an important role in maintaining a stable resistive switching for HfOx-based memory devices.

Keywords

atomic layer depositionmemoryfilamentary
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I07-04
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hung, C. C., Kao, M. J., Chen, Y. S., Wang, Y. H., Hsu, H. H., Chen, C. M., Lee, Y. J., Chen, W. C., Lee, J. Y., Chen, W. S., Lin, W. C., Shen, K. H., Wei, J. H., Wang, L. C., Chen, K. L., Chao, S., Tang, D. D. and Tsai, M.-J., in IEDM Tech. Dig.: pp. 575–578 (2004).Google Scholar
2. Lai, S., in IEDM Tech. Dig.: pp. 257–258 (2003).Google Scholar
3. Mathur, N.: Nature (London), 390, 229 (1997).Google Scholar
4. Baek, I. G., Lee, M. S., Seo, S., Lee, M. J., Seo, D. H., Suh, D. –S., Park, J. C., Park, S. O., Kim, H. S., Yoo, I. K., Chung, U-In, and Moon, J. T., in IEDM Tech. Dig.: pp. 587–590 (2004).Google Scholar
5. Rohde, C., Choi, B. J., Jeong, D. S., Choi, S., Zhao, J. S., and Hwang, C. S.: Appl. Phys. Lett.,vol. 86, 262907 (2005).Google Scholar
6. Kim, S., Byun, I., Hwang, I., Kim, J., Choi, J., Park, B.H., Seo, S., Lee, M. J., Seo, D. H., Suh, D. S., Joung, Y. S. and Yoo, I. K.: Jpn. J. Appl. Phys., 44, L345 (2005).Google Scholar
7. Baek, I. G., Kim, D. C., Lee, M. J., Kim, H. –J., Yim, E. K., Lee, M. S., Lee, J. E., Ahn, S. E., Seo, S., Lee, J. H., Park, J. C., Cha, Y. K., Park, S. O., Kim, H. S., Yoo, I. K., Chung, U. –In, Moon, J. T. and Ryu, B. I.: IEDM Tech. Dig., pp. 750–753 (2005).Google Scholar
8. Lee, Heng-Yuan, Chen, Pang - Shiu, Wang, Ching-Chiun, Maikap, Siddheswar, Tzeng, Pei-Jer, Lin, Cha-Hsin, Lee, Lurng-Shehng, and Tsai, Ming-Jinn: J. J. Appl. Phys., 46, 2175 (2007).Google Scholar
9. Triyoso, D., Liu, R., Roan, D., Ramon, M., Edwards, N. V., Gregory, R., Werho, D., Kulik, J., Tam, G., Irwin, E., Wang, X.-D., La, L. B., Hobbs, C., Garcia, R., Baker, J., White, B. E. Jr, and Tobina, P.: Journal of The Electrochemical Society, 151, F220 (2004).Google Scholar
10. Kim, D. C., Lee, M. J., Ahn, S. E., Seo, S., Park, J. C., Yoo, I. K., Baek, I. G., Kim, H. J., Yim, E. K., Lee, J. E., Park, S. O., Kim, H. S., Chung, U-In, Moon, J. T., and Ryu, B. I.: Appl. Phys. Lett., 88, 232106 (2006).Google Scholar
11. Kinoshita, K., Tamura, T., Aso, H., Noshiro, H., Yoshida, C., Aoki, M., Sugiyama, Y. and Tanaka, H.: Nonvolatile Semiconductor Memory Workshop, pp. 84–85 (2006).Google Scholar
12. Kim, Kyung Min, Choi, Byung Joon, Koo, Bon Wook, Choi, Seol, Jeong, Doo Seok, and Hwang, Cheol Seong: Electrochemical and Solid-state Lett. 9, G343 (2006).Google Scholar