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Heterogeneous Strain Relaxation in GaAs on Si (100)

Published online by Cambridge University Press:  28 February 2011

A. Freundlich ,
G. Neu ,
A. Leycuras ,
R. Carles  and
C. Verie
A. Freundlich
Affiliation:
Laboratoire de Physique du Solide et Energie Solaire, CNRS, Pare de Sophia-Antipolis, 06560 VALBONNE (France)
G. Neu
Affiliation:
Laboratoire de Physique du Solide et Energie Solaire, CNRS, Pare de Sophia-Antipolis, 06560 VALBONNE (France)
A. Leycuras
Affiliation:
Laboratoire de Physique du Solide et Energie Solaire, CNRS, Pare de Sophia-Antipolis, 06560 VALBONNE (France)
R. Carles
Affiliation:
Laboratoire de Physique des Solides, Université Paul Sabatier, 31062 TOULOUSE (France)
C. Verie
Affiliation:
Laboratoire de Physique du Solide et Energie Solaire, CNRS, Pare de Sophia-Antipolis, 06560 VALBONNE (France)
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Abstract

Residual stress in MOVPE grown GaAs on (100)Si substrates is investigated using Haman spectroscopy, X-ray diffraction, low temperature photoluminescence and photoluminescence excitation spectroscopy experiments. At room temperature, 2 µm-thick GaAs/Si is found to be under biaxial (100) tensile stress of X = 1.8 ± 0.3 kbar, near the epilayer surface. The stress magnitude decreases as the distance from interface decreases. PL and PLE studies on post-growth thermally annealed GaAs/Si reveal coexistence of unstrained and strained GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 251
Copyright
Copyright © Materials Research Society 1988

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References

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