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Heteroepitaxy of GaAs on Si by MOCVD

Published online by Cambridge University Press:  28 February 2011

Tetsuo Soga ,
Toru Imori  and
Masayoshi Umeno
Tetsuo Soga
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
Toru Imori*
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
Masayoshi Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
*
*Present address: Central Research Laboratories, Nippon Mining Company, LTD, 17–35, Niizo-Minami, 3-Chome, Toda-shi, Saitama 335
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Abstract

The stress and strain of GaAs on Si grown by using strained superlattice intermediate layers and a two-step growth method are characterized by the photoluminescence, X-ray diffraction and the curvature radius. The strain of GaAs grown using strained superlattice intermediate layers is smaller than that grown by the two-step growth method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 69
Copyright
Copyright © Materials Research Society 1987

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References

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[6] Sakai, S., Soga, T. and Umeno, M., Jpn. J. Appl. Phys. 25 1680 (1986).Google Scholar