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Heteroepitaxy of GaAs on CaF2/Si(111) By Surface Free Energy Modulation Method

Published online by Cambridge University Press:  10 February 2011

K. Kawasaki  and
K. Tsutsui
K. Kawasaki
Affiliation:
Department of Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan, [email protected]
K. Tsutsui
Affiliation:
Department of Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan, [email protected]
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Abstract

An epitaxial GaAs layer was grown on a CaF2 (111) by means of surface free energy modulation of CaF2 by one-monolayer-height island formation. An additional low-temperature growth at a final stage of growth of the CaF2 layer on Si(111) produced high density islands whose height was one monolayer of CaF2. This surface structure contributed to enhance wettability of overgrown GaAs. Two-step growth sequence was also examined in order to grow GaAs layer on the modified CaF2/Si(111) with good crystallinity. The electron mobility of 2,000cm2/Vs in a Si doped GaAs layer (6×1017 cm−3) was obtained by the combination of the surface energy modulation method and the two-step growth method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 51
Copyright
Copyright © Materials Research Society 1999

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