Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-27T02:09:01.292Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Scandium Magnesium Oxide on GaN

Published online by Cambridge University Press:  01 February 2011

A H Onstine ,
A Herrero ,
B P Gila ,
J Kim ,
R Mehandru ,
C R Abernathy ,
F Ren  and
S J Pearton
A H Onstine
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
B P Gila
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
J Kim
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
C R Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
F Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
S J Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Get access

Abstract

Sc2O3 and MgO have been previously shown to be promising gate dielectrics for III-nitride devices. However, even though the films are initially epitaxial, they possess large numbers of defects due to the large mismatch with GaN. Thus further improvements in interface electrical characteristics will require a reduction in the interfacial mismatch between the oxides and the GaN. This paper discusses the feasibility of reducing the Sc2O3 lattice constant via the introduction of Mg and in particular investigates the relationship between growth parameters and microstructure for the resulting ScMgO alloy. Increasing the magnesium cell temperature was found to increase the growth rate but have little effect on surface roughness. Higher Mg cell temperatures also produced evidence in x-ray diffraction (XRD) of a second phase of MgScO which has the rock salt crystal structure and contains ∼2%Sc. Increasing the substrate temperature from 100°C to 300°C was found to have little effect on the growth rate and dramatically increased surface roughness. However higher substrate temperature combined with a lower Mg cell temperature produced a more uniform oxygen profile as determined by depth profiling Auger Electron Spectroscopy (AES). From AES and XRD, the solid solubility limit for ScxMg1−xO with the Bixbyite structure was reached at about XMg =0.28

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E8.6
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ren, F., Hong, M., Chu, S.N.G., Marcus, M.A., Schurman, M.J., Baca, A., Pearton, S.J., Abernathy, C.R., Appl. Phys. Lett. 1998; 73: 3893–3895.Google Scholar
2. Asif Khan, M., Hu, X., Tarakji, A., Simin, G., Yang, J., Gaska, R., Shur, M.S., Appl. Phys. Lett. 77, 1339–1341(2001).Google Scholar
3. Simin, G., Hu, X., Ilinsakaya, N., Zhang, J., Tarakji, A., Kumar, A., Yang, J., Asif Khan, M., Gaska, R., Shur, M.S., IEEE Electron Dev. Lett. 22, 53–55 (2001).Google Scholar
4. Gaffey, B.P., Guido, L.J., Wang, X.W., Ma, T.P., IEEE Trans. Electron Dev. ED48, 458–463 (2001).Google Scholar
5. Binari, S.C., Doverspike, K., Kelner, G., Dietrich, H.B., Wickenden, A.E., Solid-State Electron. 41, 177–182 (1997).Google Scholar
6. Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T., Umeno, M., Appl. Phys. Lett. 73, 809 (1998).Google Scholar
7. Irokawa, Y., Nakano, Y., Solid-State Electron. 46, 1559–1564 (2001).Google Scholar
8. Lay, T.S., Hong, M., Kwo, J., Mannaerts, J.P., Hung, W.H., Huang, D.J., Solid-State Electron. 45, 1679–1683 (2001).Google Scholar
9. Hashizume, T., Alekseev, E., Pavlidis, D., Boutros, K.S., Redwing, J., J. Appl. Phys. 88, 1983–1987 (2000).Google Scholar
10. Zhang, N.Q., Keller, S., Parish, G., Heikman, S., DenBaars, S.P., Mishra, U.K., IEEE Electron Device Lett. 21, 421–423 (2001).Google Scholar
11. Therrien, R., Lucovsky, G., Davis, R.F., Phys. Stat. Solidi. A176, 2000(1999).Google Scholar
12. Johnson, J.W., Gila, B.P., Lou, B., Lee, K.P., Abernathy, C.R., Pearton, S.J., Chyi, J.I., Nee, T.E., Lee, C.M., Chou, C.C., Ren, F., J. Electrochem. Soc. G303–306 (2001).Google Scholar
13. Johnson, J.W., Lou, B., Ren, F., Gila, B.P., Krishnamoorthy, V., Abernathy, C.R., Pearton, S.J., Chyi, J.I., Nee, T.E., Lee, C.M., Chou, C.C., Appl. Phys. Lett. 77, 3230–3232 (2000).Google Scholar
14. Pearton, S.J., Abernathy, C.R., Gila, B.P., Onstine, A.H., Overberg, M.E., Thaler, G.T., Kim, J., Lou, B., Mehandru, R., Ren, F., Park, Y.D., Opto-Electron. Rev. 10(4), 231–236 (2002).Google Scholar
15. Kim, J., Mehandru, R., Luo, B., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Irokawa, Y., Appl. Phys. Lett. 80 (24), 4555–4557 (2002).Google Scholar
16. Kim, J., Gila, B.P., Mehandru, R., Johnson, J.W., Shin, J.H., Lee, K.P., Luo, B., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Ren, F., J. Ectrochem. Soc. 149 (8) G482-G484 (2002).Google Scholar
17. Kim, J., Mehandru, R., Luo, B., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Irokawa, Y., Appl. Phys. Lett. 81(2), 373–375 (2002).Google Scholar
18. Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Birkhahn, R., Peres, B., Fitch, R.C., Moser, N., Gillespie, J.K., Jessen, G.H., Jenkins, T.J., Yannuzi, M.J., Via, G.D., Crespo, A., Sol. Stat. Elect. 47, 1781–1786 (2003).Google Scholar
19. Mehandru, R., Gila, B.P., Kim, J., Johnson, J.W., Lee, K.P., Luo, B., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Ren, F., Electrochem. Sol.-Stat. Lett. 5 (7) G51-G53 (2002).Google Scholar
20. Mehandru, R., Luo, B., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., Crespo, A., Appl. Phys. Lett. 82(15) 2530–2532 (2003).Google Scholar
21. Gila, B.P., Johnson, J.W., Mehandru, R., Luo, B., Onstine, A.H., Allums, K.K., Krishnamoorthy, V., Bates, S., Abernathy, C. R., Ren, F., Pearton, S.J., Phys. Stat. Sol. (a) 188 (1), 239–242 (2001).Google Scholar
22. Onstine, A. H., Gila, B. P., Kim, J., Stodilka, D., Allums, K., Abernathy, C. R., Ren, F., Pearton, S. J. submitted for publication in Sol. Stat. Elect. 2003.Google Scholar