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Growth of Improved GaAs/Si: Suppression of Volmer-Weber Nucleation for Reduced Threading Dislocation Density

Published online by Cambridge University Press:  10 February 2011

P. J. Taylor ,
W.A. Jesser ,
G. Simonis ,
W. Chang ,
M. Lara-Taysing ,
J. Bradshaw ,
W. Clark ,
M. Martinka ,
J.D. Benson  and
J.H. Dinàn
P. J. Taylor
Affiliation:
Dept. Mat. Sci. and Engineering, University of Virginia, Charlottesville, VA 22903 now at M.I.T. Lincoln Laboratory, 244 Wood Street, Lexington, MA 02420)
W.A. Jesser
Affiliation:
Dept. Mat. Sci. and Engineering, University of Virginia, Charlottesville, VA 22903
G. Simonis
Affiliation:
Optoelectronics Division, US Army Research Laboratory, Adelphi, MD. 20783
W. Chang
Affiliation:
Optoelectronics Division, US Army Research Laboratory, Adelphi, MD. 20783
M. Lara-Taysing
Affiliation:
Optoelectronics Division, US Army Research Laboratory, Adelphi, MD. 20783
J. Bradshaw
Affiliation:
Optoelectronics Division, US Army Research Laboratory, Adelphi, MD. 20783
W. Clark
Affiliation:
Optoelectronics Division, US Army Research Laboratory, Adelphi, MD. 20783
M. Martinka
Affiliation:
CECOM Night-Vision and Electronic Sensors Directorate, Fort Belvoir, VA 22060
J.D. Benson
Affiliation:
CECOM Night-Vision and Electronic Sensors Directorate, Fort Belvoir, VA 22060
J.H. Dinàn
Affiliation:
CECOM Night-Vision and Electronic Sensors Directorate, Fort Belvoir, VA 22060
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Abstract

The growth of reduced dislocation density GaAs/Si is performed by a novel two-step technique where the first epitaxy step takes place at 75° C and the second is performed at 580° C. The initial deposition is single crystal, continuous, and planar such that there is no contribution to the dislocation density from Volmer-Weber island coalescence and no trapping of dislocations in pinholes. Using this new growth technique, a reduced dislocation density the order of 106/cm2 was obtained. The improved crystallinity is indicated by the more narrow x-ray full-width-at-half-maximum (FWHM) value of 110 arcseconds. GaAs p-i-n diodes were grown on the reduced dislocation density GaAs/Si and it was found that the resistivity of the intrinsic region for the heteroepitaxial diodes was similar to homoepitaxial ones for small mesa sizes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 39
Copyright
Copyright © Materials Research Society 1999

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