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Growth and Characterization of Thermoelectric Mg2Si Thin Films

Published online by Cambridge University Press:  25 July 2011

Thomas C. Hasapis ,
Eleni C. Stefanaki ,
Anastasios Siozios ,
Euripides Hatzikraniotis ,
George Vourlias ,
Panagiotis Patsalas  and
Konstantinos M. Paraskevopoulos
Thomas C. Hasapis
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
Eleni C. Stefanaki
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
Anastasios Siozios
Affiliation:
Department of Materials Science and Engineering, University of Ioannina, GR-45110, Ioannina, Greece
Euripides Hatzikraniotis
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
George Vourlias
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
Panagiotis Patsalas
Affiliation:
Department of Materials Science and Engineering, University of Ioannina, GR-45110, Ioannina, Greece
Konstantinos M. Paraskevopoulos
Affiliation:
Physics Department, Aristotle University of Thessaloniki, GR- 54124, Thessaloniki, Greece
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Abstract

In this work, room temperature co-deposition of Mg and Si was used to successfully fabricate Mg2Si thin films on Si substrate by dual cathode magnetron sputtering (DCMS). Films were annealed at 380°C. Various Mg/Si sputtering power ratios have been examined. XRD, SEM and IR reflectivity measurements on grown and annealed films, reveal that annealing is enhancing the formation of crystalline Mg2Si.

Keywords

nanostructurethermoelectricitythin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1325: Symposium E – Energy Harvesting—Recent Advances in Materials, Devices and Applications , 2011 , mrss11-1325-e06-07
Copyright
Copyright © Materials Research Society 2011

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References

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