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Gold Langmuir-Blodgett deposited nanoparticles for non-volatile memories
Published online by Cambridge University Press: 01 February 2011
Abstract
In this work, we demonstrate a MISFET memory device that incorporates a monolayer of Langmuir-Blodgett (LB) deposited gold nanoparticles as floating gate charge storage elements. The FET device is fabricated on a SOI substrate using conventional silicon processing. The nanoparticle layer is separated from the channel area of the FET with a 5 nm thermal SiO2 layer and is isolated from Al gate contact with a LB-deposited organic insulator layer. The memory effect is tested using voltage pulses on the gate of the device and monitored through drain current measurements. The nanocrystals can be charged either from the channel through the thermal oxide layer by applying pulses smaller than 5 V or from the gate through the organic insulator for higher voltage depending on the pulse duration.
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- Copyright © Materials Research Society 2005
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