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GexSi1−x/Si Heterostructures: Physics and Device Applications

Published online by Cambridge University Press:  28 February 2011

John C. Bean
John C. Bean*
Affiliation:
AT&T Bell LaboratoriesMurray Hill, New Jersey 07974
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Abstract

Work on GexSi1−x strained layer epitaxy is reviewed including: The limits of single layer and superlattice growth, and comparison with theory; Physical properties including bandgap and heterostructure band alignment; Work on non-random alloys; Device applications including MODFET's, PIN and APD photodetectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 269
Copyright
Copyright © Materials Research Society 1987

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References

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