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GexSi1−x/Si Heterostructures: Physics and Device Applications
Published online by Cambridge University Press: 28 February 2011
Abstract
Work on GexSi1−x strained layer epitaxy is reviewed including: The limits of single layer and superlattice growth, and comparison with theory; Physical properties including bandgap and heterostructure band alignment; Work on non-random alloys; Device applications including MODFET's, PIN and APD photodetectors.
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- Copyright © Materials Research Society 1987
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