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Geometrical Effects and Disintegration of Narrow TiSi2/Poly-Si Lines

Published online by Cambridge University Press:  21 February 2011

H. Norström
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef 75, 3030 Leuven, Belgium
K. Maex
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef 75, 3030 Leuven, Belgium
P. Vandenabeele
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef 75, 3030 Leuven, Belgium
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Abstract

The geometrical shape and the thermal stability of the TiSi2/poly-Si interface on narrow lines has been studied. The examined line-widths varied between 0.8 μm and 1.5 μm. The thermal stability was found to strongly correlate to theactual line-width of the structures. At the onset of degradation, at and above 900 ºC, narrow lines were observed to disintegrate at a much faster rate than wider ones. Cross-sectional microscopy (TEM and SEM) revealed the TiSi2/poly-Si interface to be curved inwards. The interface bowing was found to be more pronounced on narrow lines. It is suggested that the interface bowing results from a mechanical pinning of the TiSi2/poly-Si interface by the side-wall spacers.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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