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Geometrical Effects and Disintegration of Narrow TiSi2/Poly-Si Lines

Published online by Cambridge University Press:  21 February 2011

H. Norström
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef 75, 3030 Leuven, Belgium
K. Maex
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef 75, 3030 Leuven, Belgium
P. Vandenabeele
Affiliation:
Interuniversity Microelectronics Center (IMEC v.z.w.), Kapeldreef 75, 3030 Leuven, Belgium
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Abstract

The geometrical shape and the thermal stability of the TiSi2/poly-Si interface on narrow lines has been studied. The examined line-widths varied between 0.8 μm and 1.5 μm. The thermal stability was found to strongly correlate to theactual line-width of the structures. At the onset of degradation, at and above 900 ºC, narrow lines were observed to disintegrate at a much faster rate than wider ones. Cross-sectional microscopy (TEM and SEM) revealed the TiSi2/poly-Si interface to be curved inwards. The interface bowing was found to be more pronounced on narrow lines. It is suggested that the interface bowing results from a mechanical pinning of the TiSi2/poly-Si interface by the side-wall spacers.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

1. Ting, C.Y., d'Heurle, F.M., Iyer, S.S. andFryer, P.M.; J.Electrochem.Soc. 133, 1986, pp.2621 Google Scholar
2. Nygren, S., Ostling, M., Petersson, C.S., Norstrom, H., Ryden, K-H., Buchta, R. andChatfield, C.; Thin Solid Films, 168, 1989, pp.325 Google Scholar
3. Shenai, K., Picante, P.A., Smith, G.A., Lewis, N., McConell, M.D., Norton, J.F., Hall, E.L. andBaliga, B.J.; Mat. Res. Soc. Proc.,106, 1988, pp.149 10.1557/PROC-106-149Google Scholar
4. Shukla, R.K. andMultani, J.S.; Proceedings VMIC-87, 1987, pp.470 Google Scholar
5. Phillips, J.R., Zheng, L-R. andMayer, J.W.; Mat. Res. Soc. Proc., 106, 1988, pp.155 10.1557/PROC-106-155Google Scholar
6. Norstrém, H., Maex, K. andVandenabeele, P.; submitted to Am. Journal of Vacuum Sci. and Technol.Google Scholar
7. Lippens, P., Maex, K., hove, L. Van den, Keersmaecker, R. De, Probst, V., Koppenol, W. and Weg, W. van der; Journal de Physique, 49, 1988 pp.C4191 Google Scholar