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Gate Overlapped Lightly Doped Drain Poly-Si TFTs Employing 45° Tilt Implant For Source and Drain

Published online by Cambridge University Press:  21 March 2011

Jae-Hoon Lee ,
Moon-Young Shin ,
Heesun Shin ,
Woo-Jin Nam  and
Min-Koo Han
Jae-Hoon Lee
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: [email protected]
Moon-Young Shin
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: [email protected]
Heesun Shin
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: [email protected]
Woo-Jin Nam
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: [email protected]
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-883-0827, E-mail: [email protected]
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Abstract

We propose a short channel gate overlapped lightly doped drain (GOLDD) poly-Si TFT employing 45° tilt implant for source and drain (S/D) regions without any additional ion doping or mask. Oblique-incident ELA activation is performed to activate both n+ S/D and n- LDD regions as well as cure junction defects. The proposed poly-Si TFT can suppress the anomalous leakage current, and exhibit the better reliability against the hot-carrier stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A4.1
Copyright
Copyright © Materials Research Society 2004

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References

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