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Gas Cluster Ion Beam Processing for ULSI Fabrication

Published online by Cambridge University Press:  15 February 2011

I. Yamada  and
J. Matsuo
I. Yamada
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan [email protected]
J. Matsuo
Affiliation:
Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan
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Abstract

Unique characteristics of gas cluster ion beam bombardment are discussed in terms of ULSI fabrication processes. Cluster ion beams consisting of a few hundreds to thousands of atoms have been generated from various kinds of gas materials. Multi-collisions during the impact of accelerated cluster ions upon the substrate surfaces produce fundamentally low energy bombarding effects in a range of a few eV to hundreds of eV per atom at very high density. These bombarding characteristics can be applied to shallow ion implantation, high yield sputtering and smoothing, surface cleaning and low temperature thin film formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 265
Copyright
Copyright © Materials Research Society 1996

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References

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