Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T02:34:58.341Z Has data issue: false hasContentIssue false
  • English
  • Français

GaAs/Si Nucleation and Buffer Layer Growth

Published online by Cambridge University Press:  28 February 2011

Stephanie M. Koch ,
Robert Hull ,
S. Jeffrey Rosner  and
James S. Harris Jr.
Stephanie M. Koch
Affiliation:
Department of Electrical Engineering, Solid State Laboratories, Stanford, CA 94305
Robert Hull
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
S. Jeffrey Rosner
Affiliation:
Hewlett-Packard, 3500 Deer Creek Road, Palo Alto, CA 94304
James S. Harris Jr.
Affiliation:
Department of Electrical Engineering, Solid State Laboratories, Stanford, CA 94305
Get access

Abstract

We investigate two aspects of the initial stages of GaAs/Si growth: the effects of Si misorientation on GaAs island nucleation, and the structural changes occurring upon heating the buffer layer to the final deposition temperature. We observe that the GaAs islands tend to nucleate at Si surface steps and grow along them. The shape of the islands depends on the degree and direction of the Si misorientation from (100). Island coalescence occurs as the film grows, such that a 500Å film is almost completely continuous. In situ heating of a 30A film to 5750C for 15 minutes causes the islands to agglomerate, while similar treatment of the 500A film does not appear to expose more of the underlying substrate and in fact improves the film crystallinity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 111
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Masselink, W.T., Henderson, T., Klem, J., Fischer, R., Pearah, P., Morkog, H., Hafich, M., Wang, P.D. and Robinson, G.Y., Appl. Phys. Lett. 45, 1309 (1984).Google Scholar
2 Lee, J.W. in Heteroepitaxy on Silicon, edited by Fan, J.C.C. and Poate, J.M (Mater. Res. Soc. Proc. 62, Pittsburg, PA 1986) pp. 29–36.Google Scholar
3 Fischer, R., Morkoq, H., Neumann, D. A., Zabel, H., Choi, C., Otsuka, N., Longerbone, M. and Erickson, L.P., J. Appl. Phys. 60, 1640 (1986).Google Scholar
4 Koch, S.M., Rosner, S.J., Hull, R., Yoffe, G.W., and Harris, J. S. Jr., J. Crystal Growth 81, 205 (1987).Google Scholar
5 Ishida, K. in Heteroepitaxy on Silicon II, edited by Fan, J.C.C., Phillips, J.M., and Tsaur, B-Y (Mater. Res. Soc. Proc. 91, Pittsburg, PA 1987) pp. 133–140.Google Scholar
6 Ishizaka, A., Nakagawa, K. and Shiraki, Y. in Proc. 2nd Intern. MBE Symp., Tokyo, 1982, p. 183.Google Scholar
7 Koch, S.M., Rosner, S.J., Schlom, D., and Harris, J.S. Jr., in Heteroepitaxy on Silicon, edited by Fan, J.C.C. and Poate, J.M (Mater. Res. Soc. Proc. 67, Pittsburg, PA 1986) pp. 37–43.Google Scholar
8 Kaplan, R., Surf. Sci. 93, 145 (1980).Google Scholar
9 Henzler, M. and Clabes, J., Jpn. J. Appl. Phys., Suppl. 2, Pt. 2, 389 (1974).Google Scholar
10 Hull, R., Bean, J.C., Chand, N., Leibenguth, R. E., Bahnck, D., Koch, S.M., and Harris, J.S. Jr., presented at the 1987 MRS Fall Meeting, Boston, MA, 1987 (unpublished).Google Scholar
11 Griffith, J.E., Kubby, J.A., and Wierenga, P.E., these proceedings.Google Scholar
12 Hull, R., Fischer-Colbrie, A., Rosner, S. J., Koch, S.M., and Harris, J.S. Jr., in Heteroepitaxy on Silicon, edited by Hull, R., Gibson, J.M., and Smith, D.A. (Mater. Res. Soc. Proc. 94., Pittsburg, PA 1987) pp. 25–32.Google Scholar
13 Hull, R., Fischer-Colbrie, A., Rosner, S. J., Koch, S.M., and Harris, J.S. Jr., Appl. Phys. Lett. 51, 1723 (1987)Google Scholar
14 Biegelsen, D.K., Ponce, F.A., Krusor, B.S., Tramontana, J.C., and Yingling, R.D., presented at the 1987 Fall MRS Meeting, Boston, MA, 1987 (unpublished), and private communication.Google Scholar
15 Kroemer, H., J. Crystal Growth 81, 193 (1987).Google Scholar
16 Akiyama, M., Kawarada, Y., Nishi, S., Ueda, T., and Kaminishi, K. in Heteroepitaxy on Silicon edited by Fan, J.C.C. and Poate, J.M (Mater. Res. Soc. Proc. 67, Pittsburg, PA 1986) pp. 53–64.Google Scholar
17 Rosner, S.J., Koch, S.M., and Harris, J.S. Jr., in Heteroepitaxy on Silicon II, edited by Fan, J.C.C., Phillips, J.M., and Tsaur, B-Y (Mater. Res. Soc. Proc. 91, Pittsburg, PA 1987) pp. 155–160.Google Scholar
18 Hull, R. and Fischer-Colbrie, A., Appl. Phys. Lett. 50, 851 (1987).Google Scholar
19 Chadi, D.J., Phys. Rev. Lett. 59, 1691 (1987).CrossRefGoogle Scholar
20 Aspnes, D.E. and Ihm, J., Phys. Rev. Lett. 57, 3054 (1986).Google Scholar
21 Pearson, E.H., Halicioglu, T. and Tiller, W.A., Surf. Sci. 184, 401 (1987).Google Scholar
22 Choi, D.K., Takai, T., Erkoc, S., Halicioglu, T., and Tiller, W.A., J. Crystal Growth 85, (1987).Google Scholar