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Fundamentals of Post-CMP Cleaning

Published online by Cambridge University Press:  01 February 2011

Jin-Goo Park  and
Tae-Gon Kim
Jin-Goo Park
Affiliation:
[email protected], Hanyang University, Division of Materials and Chemical Engineering, Sa1-dong Gyeonggi-do, Ansan, 426-791, Korea, Republic of, +82-31-400-5226, +82-31-417-3701
Tae-Gon Kim
Affiliation:
[email protected], Hanyang University, Division of Materials and Chemical Engineering, Ansan, 426-791, Korea, Republic of
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Abstract

Post CMP cleaning is necessary for contaminant removal after CMP process. The zeta potential of slurry particle and substrate has been considered to be a critical factor in terms of particle adhesion and removal. The fundamental research such as the calculation and measurement of adhesion forces between slurry particle and wafer surfaces can enhance the understanding of cleaning mechanism and development of cleaning process. The presence of more than two different materials during CMP introduces new defects at the materials interface, corrosion and severe scratches. Device specific chemistry and cleaning process should be introduced and developed for future and current CMP. The highest particle removal efficiency is observed when using cleaning solutions that yields the lowest adhesion force. The effect of frictional and adhesion forces attributed to slurry particles on the quality of Cu surfaces was experimentally investigated during metal CMP process. The magnitude of the adsorption of the organic acid on the slurry particle surfaces can have a significant effect on the frictional behavior as well as the adhesion force. Higher particle adhesion forces resulted in higher friction and might induce defects such as particle contamination and scratches on the polished surface after polishing. The magnitude of particle adhesion force on wafer surfaces in slurries can be directly related to the frictional forces and polished surface quality during CMP process. As low k and poly or bare silicon polishing introduced in fabrication process, the hydrophobicity of these surfaces could affect the defects after polishing. The control of wettability during and after polishing becomes more important in reducing the defects. The organic particles are major defects during metal and poly silicon CMP which may be caused by the surface reaction of organic sources with surfaces.

Keywords

CMPsemiconductingsurface chemistry
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 991: Symposium C – Advances and Challenges in Chemical Mechanical Planarization , 2007 , 0991-C02-01
Copyright
Copyright © Materials Research Society 2007

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