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Formation of TiSi2 During Rapid Thermal Annealing: In Situ Resistance Measurements at Heating Rates From 1°C/S to 100°C/S.

Published online by Cambridge University Press:  21 February 2011

Ramanath Ganapathiraman ,
S. Koh ,
Z. Ma ,
L. H. Allen  and
S. Lee
Ramanath Ganapathiraman
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
S. Koh
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
Z. Ma
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
L. H. Allen
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801
S. Lee
Affiliation:
NCR Corporation, Colorado Springs, CO
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Abstract

In VLSI technology, there is interest in monitoring the sequence of phase formation of TiSi2 (c-Ti ⇒ a-TiSi ⇒ C49 TiSi2 ⇒ C54 TiSi2), with the prospect of reducing the temperature of formation of the stable C54 TiSi2 phase. In this study, phase formation characteristics of TiSi2 during rapid thermal annealing(RTA) of Ti-Si bilayers are investigated by means of in situ four point probe resistance measurements. Ex situ X-ray diffraction(XRD) was used for phase identification and characterization. Results indicate that the same multi-step sequence of transformations precede the formation of the C54 TiSi2 phase for heating rates from 1°C/s to 100°C/s. Also, all intermediate and metastable phases which occur at l°C/s also occur at 100°C/s. Temperature dependence and kinetics of the C49 TiSi2 and the C54 TiSi2 phase formation were studied over a wide range of heating rates. Activation energies estimated for the two processes were ∼2eV and ∼5eV respectively. Finally, a new Electrical Thermal Annealing(ETA) technique for heating at rates up to 30000°C/s is introduced. Preliminary in situ resistivity measurement results of TiSi2 formation at these high heating rates are also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 63
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Murarka, S. P. and Fraser, D. B., J. Appl. Phys., 51, 332 (1980).Google Scholar
2. Holloway, K. and Sinclair, R., J. Appl. Phys., 61, 1359 (1987).CrossRefGoogle Scholar
3. Ma, Z., Allen, L. H. and Lee, S., MRS Symp. Proc., 237, 661 (1992).Google Scholar
3. Ma, E., Clevenger, L. A., Thompson, C. V. and Tu, K. N., MRS Symp. Proc., 187, 83 (1990).CrossRefGoogle Scholar
5. Raaijmakers, I. and Kim, K., J. Appl. Phys., 67, 6255 (1990).Google Scholar
6. Wang, M. H. and Chen, L. J., Appl. Phys. Lett., 59, 2360 (1991).Google Scholar
7. Lasky, J. B., Nakos, J., Cain, O. and Geiss, P., IEEE Trans. Elec. Dev., 38, 2629 (1991).Google Scholar
8. Ogawa, S., Kouzaki, T., Yoshida, T. and Sinclair, R., J. Appl. Phys., 70, 827 (1991).Google Scholar
9. Beyers, R. and Sinclair, R., J. Appl. Phys., 12, 5230 (1985).Google Scholar
10. Beyers, R., Coulman and Merchant, P., J. Appl. Phys., 61, 5110 (1987).Google Scholar
11. Mittemeijer, E. J., Cheng, L., Schaaf, P. J. van der, Brakman, C. M. and Korevaar, B. M., Metall. Trans., 19A, 925 (1988).CrossRefGoogle Scholar