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Formation of periodic grain boundary in an Si thin film crystallized by a linearly polarized Nd:YAG pulse laser with an ultra sonic oscillator

Published online by Cambridge University Press:  21 March 2011

Hirokazu Kaki ,
Takehiko Ootani  and
Susumu Horita
Hirokazu Kaki
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
Takehiko Ootani
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
Susumu Horita
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-1292, Japan
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Abstract

In order to obtain a large silicon (Si) grain and to control the location of its boundary in a Si film melting-crystallized by a pulse laser, we have proposed to use periodic thermal distribution spontaneously induced by irradiation of a linearly polarized laser beam. We estimated the suitable amorphous Si (a-Si) thickness taking account of multiple reflection theoretically and confirmed it experimentally. Also, we proposed a novel technique to reduce the irradiation pulse number to control the grain boundary location stably in the crystallized Si film, in which the elastic wave was generated on the surface of a-Si film prior to melting-crystallization by using an ultra sonic oscillator. Owing to this technique, we can control the grain boundary location periodically with only 1 pulse irradiation in the crystallized Si film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A9.32
Copyright
Copyright © Materials Research Society 2004

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References

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