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Formation of NiSi-Silicided p + n Shallow Junctions Using Implant Through Silicide and Low Temperature Furnace Annealing

Published online by Cambridge University Press:  01 February 2011

Chao-Chun Wang ,
Chiao-Ju Lin  and
Mao-Chieh Chen
Chao-Chun Wang
Affiliation:
Department of Electronics Engineering, National Chiao-Tung University 1001 Ta Hsueh Road, Hsinchu 300, Taiwan
Chiao-Ju Lin
Affiliation:
Department of Electronics Engineering, National Chiao-Tung University 1001 Ta Hsueh Road, Hsinchu 300, Taiwan
Mao-Chieh Chen
Affiliation:
Department of Electronics Engineering, National Chiao-Tung University 1001 Ta Hsueh Road, Hsinchu 300, Taiwan
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Abstract

NiSi-silicided p+n shallow junctions are fabricated using BF2+ implantation into/through thin NiSi silicide layer (ITS technology) followed by low temperature furnace annealing (from 550 to 800°C). The NiSi film agglomerates following a thermal annealing at 600°C, and may result in the formation of discontinuous islands at a higher temperature. The incorporation of fluorine atoms in the NiSi film can retard the formation of film agglomeration and thus improve the film's thermal stability. A forward ideality factor of about 1.02 and a reverse current density of about 1nA/cm2 can be attained for the NiSi(310Å)/p+n junctions fabricated by BF2+ implantation at 35 keV to a dose of 5×1015cm-2 followed by a 650°C thermal annealing; the junction formed is about 60nm measured from the NiSi/Si interface. Activation energy measurements show that the reverse bias junction currents are dominated by the diffusion current, indicating that most of the implanted damages can be recovered after annealing at a temperature as low as 650°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D6.21
Copyright
Copyright © Materials Research Society 2003

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