Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T17:39:09.800Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation Of A Metastable Nisi Phase On <111> Si Induced By Pulsed Laser Irradiation

Published online by Cambridge University Press:  28 February 2011

F. Priolo ,
P. Baeri ,
M.G. rimaldi  and
E. Rimini
F. Priolo
Affiliation:
Dipartimento Di Fisica dell'Università, Corso Italia 57, 195129 Catania, Italy
P. Baeri
Affiliation:
Dipartimento Di Fisica dell'Università, Corso Italia 57, 195129 Catania, Italy
M.G. rimaldi
Affiliation:
Dipartimento Di Fisica dell'Università, Corso Italia 57, 195129 Catania, Italy
E. Rimini
Affiliation:
Dipartimento Di Fisica dell'Università, Corso Italia 57, 195129 Catania, Italy
Get access

Abstract

Thermally grown NiSi layers on <111> Si substrates were irradiated by 35 nsec Nd glass laser pulses in the energy density range 0.3−2.0 J/cm2. Time resolved reflectivity measurements were performed during the irradiation to detect surface melting. The samples were analyzed by 2.0 MeV He+ Rutherford Backscattering Spectrometry in combination with channeling effect. The measured threshold for surface melting was 0.5 J/cm2. Irradiation at energy densities higher than 1.3 J/cm2 changed the silicides layer composition because of the mixing with the underlying silicon. In the intermediate energy density range (0.7−1.1 J/cm ) slight changes in composition were observed, a strong alignement of NiSi molecules along the <111> substrate direction was however observed. The measured Xmin was about 30%. It seems then that an epitaxial NiSi phase can be grown by pulsed laser irradiation with a suitable choice of the incident energy density. Work is in progress to identify this new NiSi phase by TEM. However this ordered phase is a metastable one since after anunealing at 250°C, 30min the channeling yield reduction disappeared without any appreciable change in composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 491
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) “Layered Structure and Epitaxy” Edited by Gibson, J.M., Osbourn, G.C., Tromp, R.M.; Part II (MRS, Pittsburgh, 1986) p. 129 Google Scholar
2) Tung, R.T., Gibson, J.M. and Poate, J.M.; Appl.Phys.Lett. 42, 888, (1983)Google Scholar
3) Schmid, P.E., Liehr, M., Legoues, F.K. and Ho, P.S. in “Thin Film-Interfaces and Phenomena” Edited by Nemanich, R.J., Ho, P.S. and Lau, S.S. (MRS, Pittsburgh, 1986) p.469 Google Scholar
4) von Allmen, M. and Lau, S.S. in “Laser Annealing of Semiconductors” Edited by Poate, J.M. and Mayer, J.W.; Academic, 1982, p. 439 Google Scholar
5) Harith, M.H., Zhang, J.P., Baeri, P., Rimini, E. and Celotti, G.; J.Appl.Phys., 57, 4560, 1985 Google Scholar
6) Tung, R.T., Gibson, J.M., Jacobson, D.C. and Poate, J.M.; Appl.Phys.Lett., 43, 476, (1983)Google Scholar
7) Zhu, M.F., Suni, I., Nicolet, M.A. and Sands, T.; J.Appl.Phys., 56, 2470, (1984)Google Scholar
8) Hung, L.S. and Mayer, J.W.; Thin Solid Films, 109, 85, (1983)Google Scholar