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Formation and Thermal Stability of Nd0.32Y0.68Si1.7 Layers Formed by Channeled Ion Beam Synthesis

Published online by Cambridge University Press:  10 February 2011

M. F. Wu
Affiliation:
Department of Technical Physics, Peking University, Beijing, People's Republic of China Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
A. Vantomne
Affiliation:
Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
S. Hogg
Affiliation:
Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
H. Pattyn
Affiliation:
Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
G. Langouche
Affiliation:
Instituut voor Kern- en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
S. Jin
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
H. Bender
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

The Nd-disilicide, which exists only in a tetragonal or an orthorhombic structure, cannot be grown epitaxially on a Si(111) substrate. However, by adding Y and using channeled ion beam synthesis, hexagonal Nd0.32Y0.68Si1.7 epilayers with lattice constant of aepi = 0.3915 nm and cepi = 0.4152 nm and with good crystalline quality (χmin of Nd and Y is 3.5% and 4.3 % respectively) are formed in a Si(111) substrate. This shows that the addition of Y to the Nd-Si system forces the latter into a hexagonal structure. The epilayer is stable up to 950 °C; annealing at 1000 °C results in partial transformation into other phases. The formation, the structure and the thermal stability of this ternary silicide have been studied using Rutherford backscattering/channeling, x-ray diffraction and transmission electron microscopy.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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