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Ferroelectric Properties of 15–20nm-Thick PZT Ultrathin Films Prepared by MOCVD

Published online by Cambridge University Press:  11 February 2011

H. Nonomura ,
H. Fujisawa ,
M. Shimizu ,
H. Niu  and
K. Honda
H. Nonomura
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–2201, Japan
H. Fujisawa
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–2201, Japan
M. Shimizu
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–2201, Japan
H. Niu
Affiliation:
Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–2201, Japan
K. Honda
Affiliation:
Fujitsu Laboratory Ltd., 10–1 Wakamiya Morinosato, Atsugi, Kanagawa 243–0197, Japan
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Abstract

We investigated ferroelectric properties of 20nm-thick epitaxial Pb(Zr,Ti)O3 (PZT) ultrathin films prepared on SrRuO3 (SRO)/SrTiO3 (STO) by metalorganic chemical vapor deposition (MOCVD). When SRO with terrace ledges was used as a bottom electrode, 20nm-thick PZT ultrathin films with ferroelectricity were successfully obtained. These PZT films exhibited saturated hysteresis loops with remanent polarizations (Pr) of 29–33 μC/cm2 and coercive electric fields (Ec) of 340–370 kV/cm. On the other hand, when PZT films were grown on SRO without terrace ledges, PZT films showed no saturated hysteresis loops because of large leakage current. The 15nm-thick PZT ultrathin film exhibiting unsaturated hysteresis loop was also obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U2.9
Copyright
Copyright © Materials Research Society 2003

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References

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