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Facilitated C54-TiSi2 Formation With Elevated Deposition Temperature: A Study of CO-Deposited Layers

Published online by Cambridge University Press:  10 February 2011

S. Ohmi  and
R. T. Tung
R. T. Tung
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ 07974
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Abstract

The effect of co-deposition method on the C49- to C54-TiSi2 phase transformation was investigated. Both the co-deposition ratio of TiSix layers and the deposition temperature were found to have a significant effect on the C54 phase transformation. The optimum composition to form C54 TiSi2 phase was x∼l.5 for room temperature deposition, and x∼2.0 for samples deposited at 400°C. The incorporation of a small amount of Mo had a beneficial effect on the C54 transformation in layers deposited at room temperature, but it had little effect in layers deposited at 400°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 47
Copyright
Copyright © Materials Research Society 1999

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References

[1] Yamazaki, T., Goto, K., Fukano, T., Nara, Y., Sugii, T., and Ito, T., 1993 IEDM Tech. Dig., 906 (1993)Google Scholar
[2] Beyers, R. and Sinclair, R., J. Appl. Phys. 57, 5240 (1985)10.1063/1.335263Google Scholar
[3] Lasky, J. B., Nakos, J. S., Cain, O. J., and Geiss, P. J., IEEE Trans. Electron. Devices 38, 262(1991)10.1109/16.69904Google Scholar
[4] Jeon, H., Sukow, C. A., Honeycutt, J. W., Rozgonyi, G., and Nemanich, R. J., J. Appl. Phys. 71,4269 (1992)10.1063/1.350808Google Scholar
[5] Fujii, K., Tung, R. T., Eagledssham, D. J., Kikuta, K., and Kikkawa, T., Mater. Res. Soc. Symp. Proc. 402, 83 (1996)10.1557/PROC-402-83Google Scholar
[6] Tung, R. T., Fujii, K., Kikuta, K., Chikaki, S., and Kikkawa, T., Appl. Phys. Lett., 70 2386 (1997)10.1063/1.118880Google Scholar
[7] Chang, S. M., Huang, H. Y., Yang, H. Y., and Chen, L. J., Appl. Phys. Lett., 74, 224 (1999)10.1063/1.123300Google Scholar
[8] Ohmi, S. and Tung, R. T., J. Appl. Phys. Accepted for publication (1999)Google Scholar