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Fabrication of IGZO and In2O3-channel Ferroelectric-gate Thin Film Transistors

Published online by Cambridge University Press:  01 February 2011

tomohiro Oiwa  and
Eisuke Tokumitsu
tomohiro Oiwa
Affiliation:
[email protected], Tokyo Institute of Technology, Yokohama, Japan
Eisuke Tokumitsu
Affiliation:
[email protected], Tokyo Institute of Technology, Yokohama, Japan
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Abstract

We have fabricated and characterized ferroelectric-gate TFTs using In-Ga-Zn-O (IGZO) or In2O3 as a channel material. The ferroelectric gate insulator used in this work is (Bi,La)4Ti3O12 (BLT). We observed normal n-channel transistor operation for both IGZO and In2O3-channel TFTs. However, a charge injection type hysteresis was observed for IGZO channel TFTs in drain current – gate voltage (ID-VG) characteristics. Post fabrication anneal at 300oC reduced the charge-injection-tyoe hystereesis and the subthreshold swing was also improved from 0.27 to 0.19 V/decade. On the other hand, when the In2O3 was used as a channel, hysteresis due to the ferroelectric gate insulator was clearly observed in ID-VG characteristics. A memory window of 2V, a subthreshold voltage swing of 0.35V/decade, a field-effect mobility of 1.6 cm2/Vs, and a on/off drain current ratio of more than 10^6 were obtained.

Keywords

devicesferroelectricthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G13-07
Copyright
Copyright © Materials Research Society 2010

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References

1 Carcia, P. F., McLean, R. S., Reilly, M. H., and Nunes, G. Jr., Appl. Phys.Lett. 82, 1117 (2004)10.1063/1.1553997Google Scholar
2 Nishii, J., Hossain, F. M., Takagi, S., Aita, T., Saikusa, K., Ohmaki, Y., Ohkubo, I., Kishimoto, S., Ohtomo, A., Fukumura, T., Matsukura, F., Ohno, Y., Koinuma, H., Ohno, H., and Kawasaki, M., Jpn. J. Appl. Phys., 42, L347 (2003).10.1143/JJAP.42.L347Google Scholar
3 Nakajima, K., Ohta, H., Ueda, K., Kamiya, T., Hirano, M., and Hosono, H., Science 300, 1269 (2003).Google Scholar
4 Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., and Hosono, H., Nature 432, 488 (2004).10.1038/nature03090Google Scholar
5 Miyasako, T., Senoo, M., and Tokumitsu, E., Appl. Phys. Lett., 86, 162902 (2005).10.1063/1.1905800Google Scholar
6 Tokumitsu, E., Senoo, M. and Miyasako, T., J. of Microelectronic Engineering, 80, 305, (2005).10.1016/j.mee.2005.04.017Google Scholar
7 Yabuta, H., Sano, M., Abe, K., Aiba, T., Den, T., Kumomi, H., Nomura, K., Kamiya, T., and Hosono, H., Appl. Phys. Lett., 89, 112123 (2006).10.1063/1.2353811Google Scholar