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Fabrication and Characterization of Copper Oxide Resistive Memory Devices

Published online by Cambridge University Press:  29 June 2011

S.M. Bishop ,
B.D. Briggs ,
Z.P. Rice ,
S. Addepalli ,
N.R. McDonald  and
N.C. Cady
S.M. Bishop
Affiliation:
University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, NY 12203, U.S.A
B.D. Briggs
Affiliation:
University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, NY 12203, U.S.A
Z.P. Rice
Affiliation:
University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, NY 12203, U.S.A
S. Addepalli
Affiliation:
University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, NY 12203, U.S.A
N.R. McDonald
Affiliation:
Air Force Research Laboratory/RITC, Rome, NY 13441, USA
N.C. Cady
Affiliation:
University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, NY 12203, U.S.A
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Abstract

Three synthesis techniques have been explored as routes to produce copper oxide for use in resistive memory devices (RMDs). The major results and their impact on device current-voltage characteristics are summarized. The majority of the devices fabricated from thermally oxidized copper exhibited a diode-like behavior independent of the top electrode. When these devices were etched to form mesa structures, bipolar switching was observed with set voltages <2.5 V, reset voltages <(-1) V and ROFF/RON ∼103-104. Bipolar switching behavior was also observed for devices fabricated from copper oxide synthesized by RT plasma oxidation (ROFF/RON up to 108). Voiding at the copper-copper oxide interface occurred in films produced by thermal and plasma oxidation performed at ≥200°C. The copper oxide synthesized by reactive sputtering had large areas of open volume in the microstructure; this resulted in short circuited devices because of electrical contact between the bottom and top electrodes. The results for fabricating copper oxide into ≤100 nm features are also discussed.

Keywords

memoryoxidedevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1337: Symposium Q – New Functional Materials and Emerging Device Architectures for Nonvolatile Memories , 2011 , mrss11-1337-q07-04
Copyright
Copyright © Materials Research Society 2011

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References

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