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External rf substrate biasing during a-Si:H film growth using the expanding thermal plasma technique

Published online by Cambridge University Press:  21 March 2011

A.H.M. Smets ,
W.M.M. Kessels  and
M.C.M. van de Sanden
A.H.M. Smets
Affiliation:
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
W.M.M. Kessels
Affiliation:
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
M.C.M. van de Sanden
Affiliation:
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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Abstract

The interchangeability of ion bombardment and deposition temperature during a-Si:H film growth at high deposition rates (10-42 Å/s) by means of the expanding thermal plasma has been studied. The ion bombardment is generated by applying an external rf bias voltage on the substrate. It is shown that the opto-electronic performance of the a-Si:H films improves considerably when a moderate rf substrate bias voltage (∼20-60 V) is applied, i.e. the photo response increases two orders of magnitude up to 106. Furthermore, it is also revealed that the additional energy supplied to the growth surface by the ion bombardment, makes a reduction of the deposition temperature by ∼100 °C possible, while preserving good material properties. On the basis of the results obtained, three effects caused by the rf substrate bias can be distinguished: creation of an additional growth flux, a reduction of the void incorporation, and an increase in the vacancy density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A9.21
Copyright
Copyright © Materials Research Society 2004

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References

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