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Experimental and Model Studies of Dopant Segregation During Growth of Silicon Films by Molecular Beam Epitaxy

Published online by Cambridge University Press:  22 February 2011

W. -X. Ni ,
G. V. Hansson ,
J. -E. Sundgren ,
L. C. Markert  and
J. E. Greene
W. -X. Ni
Affiliation:
Linkoping University, Dept. of Physics, S-581 83 Linkoping, Sweden
G. V. Hansson
Affiliation:
Linkoping University, Dept. of Physics, S-581 83 Linkoping, Sweden
J. -E. Sundgren
Affiliation:
Linkoping University, Dept. of Physics, S-581 83 Linkoping, Sweden
L. C. Markert
Affiliation:
Linkoping University, Dept. of Physics, S-581 83 Linkoping, Sweden
J. E. Greene
Affiliation:
University of Illinois at Urbana, Dept. of Materials Science, Urbana, IL
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Abstract

Dopant incorporation and surface segregation are studied for thermal Sb and Al cases. The values of the incorporation probability and the segregation ratio have been mainly determine by SIMS measurements. The doping kinetics is discussed using a multi-site model including high dopant surface coverage effects. The calculated results were in good agreement with experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 91
Copyright
Copyright © Materials Research Society 1991

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References

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