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Evolution of SOI MOSFETs: from Single Gate to Multiple Gates

Published online by Cambridge University Press:  01 February 2011

Jean-Pierre Colinge
Jean-Pierre Colinge*
Affiliation:
Department of Electrical and Computer Engineering University of California Davis, CA 95616, USA
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Abstract

To improve short-channel characteristics and increase current drive, SOI technology is shifting focus from “classical” single-gate MOSFET architectures to multiple-gate device structures. This paper traces the history of single- and multiple-gate SOI MOSFETs and summarizes the electrical characteristics of such devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D1.6
Copyright
Copyright © Materials Research Society 2003

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