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Evaluation of Lpcvd Boron Nitride as a Low Dielectric Constant Material

Published online by Cambridge University Press:  15 February 2011

R. A. Levy ,
M. Narayan ,
M. Z. Karim  and
S. T. Hsu
R. A. Levy
Affiliation:
New Jersey Institute of Technology, University Heights, Newark, NJ 07102
M. Narayan
Affiliation:
New Jersey Institute of Technology, University Heights, Newark, NJ 07102
M. Z. Karim
Affiliation:
Sharp Microelectronics Technology, Camas, WA 98607
S. T. Hsu
Affiliation:
Sharp Microelectronics Technology, Camas, WA 98607
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Abstract

This study characterizes low pressure chemically vapor deposited B-N-C-H as a low dielectric constant material for interlevel dielectric applications. These films are synthesized over a temperature range of 400 to 600 °C and various flow rate ratios using triethylamine borane complex (TEAB) and NH3 as precursors. The dielectric constant of these films exhibit values which varied in the range of 2.6 to 3.5 depending on processing conditions. Low dielectric constant values are achieved at film compositions which approached stoichiometry and have minimal carbon content. The variations in the structural, optical, mechanical, and chemical properties of these films as a function of deposition conditions are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 469
Copyright
Copyright © Materials Research Society 1996

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