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Estimation of the Number of Injected Interstitial Atoms during Nitrous Oxidation of Silicon

Published online by Cambridge University Press:  10 February 2011

D. Skarlatos ,
L.F. Giles ,
C. Tsamis ,
A. Claverie  and
D. Tsoukalas
D. Skarlatos
Affiliation:
Institute of Microelectronics, NCSR 'Demokritos', 15310 Aghia Paraskevi, Greece
L.F. Giles
Affiliation:
CEMES/CNRS, BP 4347, 31055 Toulouse Cedex, France
C. Tsamis
Affiliation:
Institute of Microelectronics, NCSR 'Demokritos', 15310 Aghia Paraskevi, Greece
A. Claverie
Affiliation:
CEMES/CNRS, BP 4347, 31055 Toulouse Cedex, France
D. Tsoukalas
Affiliation:
Institute of Microelectronics, NCSR 'Demokritos', 15310 Aghia Paraskevi, Greece
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Abstract

In this work we use dislocation loops to monitor the interstitial injection during the oxynitridation (oxidation in 100% N2O ambient) of silicon at low temperatures (850–950 °C). The interstitials captured by the loops are measured using Transmission Electron Microscopy. The number of Si atoms released after oxynitridation was calculated from the difference in the total amount of atoms stored in the loops between oxidizing and inert ambient. We obtained that this number is larger compared with the respective under the same dry oxidation (in 100% O2 ambient) conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 289
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

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