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Epitaxy Of GaAs on Si: MBE and OMCVD

Published online by Cambridge University Press:  28 February 2011

Jhang W. Lee ,
Jack P. Salerno ,
Ron P. Gale  and
John C.C. Fan
Jhang W. Lee
Affiliation:
KOPIN Corporation, 695 Myles Standish Blvd., Taunton, HA 02780
Jack P. Salerno
Affiliation:
KOPIN Corporation, 695 Myles Standish Blvd., Taunton, HA 02780
Ron P. Gale
Affiliation:
KOPIN Corporation, 695 Myles Standish Blvd., Taunton, HA 02780
John C.C. Fan
Affiliation:
KOPIN Corporation, 695 Myles Standish Blvd., Taunton, HA 02780
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Abstract

Growth technique dependent factors are compared for molecular beam epitaxy (MBE) and organometallic chemical vapor deposition (OMCVD) that are related to the GaAs on Si epitaxy. The comparison, both for growth processes and as-grown material characteristics, indicates that material qualities of these layers provided by the two growth techniques are comparable in many aspects, but differ in morphological texture, residual stress, and occasionally Schottky barrier height. These issues are discussed further with our recent OMCVD results in order to ensure the OMCVD advantages for GaAs on Si wafer engineering, which are referred as an easy scale-up and a large throughput.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 33
Copyright
Copyright © Materials Research Society 1987

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References

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