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Epitaxial Phase Change Materials: Growth and Switching of Ge2Sb2Te5 on GaSb(001)

Published online by Cambridge University Press:  31 January 2011

Wolfgang Braun ,
Roman Shayduk ,
Timur Flissikowski ,
Holger T. Grahn ,
Henning Riechert ,
Paul Fons  and
Alex Kolobov
Wolfgang Braun
Affiliation:
[email protected], Paul-Drude Institute for Solid State Electronics, Berlin, Germany
Roman Shayduk
Affiliation:
[email protected], Paul-Drude Institute for Solid State Electronics, Berlin, Germany
Timur Flissikowski
Affiliation:
[email protected], Paul-Drude Institute for Solid State Electronics, Berlin, Germany
Holger T. Grahn
Affiliation:
[email protected], Paul-Drude Institute for Solid State Electronics, Berlin, Germany
Henning Riechert
Affiliation:
[email protected], Paul-Drude Institute for Solid State Electronics, Berlin, Germany
Paul Fons
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Center for Applied Near-Field Optics Research, Tsukuba, Japan
Alex Kolobov
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Center for Applied Near-Field Optics Research, Tsukuba, Japan
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Abstract

Epitaxial Ge2Sb2Te5 has been successfully grown on GaSb(001) by molecular beam epitaxy. The films show a tendency for void formation and rough morphology, but at the same time a very strong epitaxial orientation, cubic structure and a sharp interface to the substrate. The layers can be reversibly switched between the crystalline and amorphous phases using short laser pulses.

Keywords

molecular beam epitaxy (MBE)memorycrystallographic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1160: Symposium H – Materials and Physics for Nonvolatile Memories , 2009 , 1160-H14-05
Copyright
Copyright © Materials Research Society 2009

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References

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