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Enhanced Spontaneous Polarization of Dysprosium-substituted Lead Zirconate Titanate Thin Films by a Chemical Solution Deposition Method

Published online by Cambridge University Press:  01 February 2011

Hiroshi Uchida ,
Hiroshi Nakaki ,
Shoji Okamoto ,
Shintaro Yokoyama ,
Hiroshi Funakubo  and
Seiichiro Koda
Hiroshi Uchida
Affiliation:
Department of Chemistry, Faculty of Science and Technology, Sophia University, 7–1 Kioi-cho, Chiyoda-ku, Tokyo, 102–8554, Japan
Hiroshi Nakaki
Affiliation:
Department of Chemistry, Faculty of Science and Technology, Sophia University, 7–1 Kioi-cho, Chiyoda-ku, Tokyo, 102–8554, Japan
Shoji Okamoto
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226–8502, Japan
Shintaro Yokoyama
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226–8502, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226–8502, Japan
Seiichiro Koda
Affiliation:
Department of Chemistry, Faculty of Science and Technology, Sophia University, 7–1 Kioi-cho, Chiyoda-ku, Tokyo, 102–8554, Japan
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Abstract

Influences of the B-site substitution using Dy3+ ion on the crystal structure and ferroelectric properties of lead zirconate titanate (PZT) films were investigated. Dy3+-substituted PZT films with nominal chemical compositions of Pb1.00Dyx (Zr0.40Ti0.60)1-(3x/4)O3 (x = 0 ∼ 0.06) were fabricated by a chemical solution deposition (CSD). Polycrystalline PZT films with preferential orientation of (111)PZT were obtained on (111)Pt/TiO2/SiO2/(100)Si substrates, while epitaxially-grown (111)PZT films were fabricated on (111)SrRuO3//(111)Pt//(100)YSZ//(100)Si substrate. Ratio of PZT lattice parameters (c/a), which corresponds to its crystal anisotropy, was enhanced by the Dy3+-substitution with x = 0.02. Spontaneous polarization (Ps) of Dy3+-substituted PZT film (x = 0.02) along polar [001] axis of PZT lattice was estimated from saturation polarization (Psat) value of the epitaxially-grown (111)PZT film on (111)SrRuO3//(111)Pt//(100)YSZ//(100)Si to be 84 μC/cm2 that was significantly larger than that of non-substituted PZT (= 71 μC/cm2). We concluded that the enhancement of Ps value could be achieved by the Dy3+-substitution that promoted the crystal anisotropy of PZT lattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D6.21
Copyright
Copyright © Materials Research Society 2005

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References

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