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Enhanced Forward Bias Operation of 4H-SiC PiN Diodes Using High Temperature Oxidation

Published online by Cambridge University Press:  18 July 2014

Craig A. Fisher ,
Michael R. Jennings ,
Yogesh K. Sharma ,
Dean P. Hamilton ,
Stephen M. Thomas ,
Fan Li ,
Peter M. Gammon ,
Amador Pérez-Tomás ,
Susan E. Burrows  and
Philip A. Mawby
Craig A. Fisher
Affiliation:
School of Engineering, University of Warwick, Coventry, CV4 7AL, UK.
Michael R. Jennings
Affiliation:
School of Engineering, University of Warwick, Coventry, CV4 7AL, UK.
Yogesh K. Sharma
Affiliation:
School of Engineering, University of Warwick, Coventry, CV4 7AL, UK.
Dean P. Hamilton
Affiliation:
School of Engineering, University of Warwick, Coventry, CV4 7AL, UK.
Stephen M. Thomas
Affiliation:
School of Engineering, University of Warwick, Coventry, CV4 7AL, UK.
Fan Li
Affiliation:
School of Engineering, University of Warwick, Coventry, CV4 7AL, UK.
Peter M. Gammon
Affiliation:
School of Engineering, University of Warwick, Coventry, CV4 7AL, UK.
Amador Pérez-Tomás
Affiliation:
Institut Català De Nanociència i Nanotecnologia, 08193, Bellaterra, Barcelona, Spain.
Susan E. Burrows
Affiliation:
Department of Physics, University of Warwick, Coventry, CV4 7AL, UK.
Philip A. Mawby
Affiliation:
School of Engineering, University of Warwick, Coventry, CV4 7AL, UK.
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Abstract

In this paper, high temperature (>1400°C) thermal oxidation has been applied, for the first time, to 4H-SiC PiN diodes with thick (110 μm) drift regions, for the purpose of increasing the carrier lifetime in the semiconductor. PiN diodes were fabricated using 4H-SiC material that had undergone thermal oxidation performed at 1400°C, 1500°C and 1600°C, then were electrically characterized. Forward current-voltage (I-V) measurements showed that thermally oxidized PiN diodes exhibited considerably improved electrical characteristics, with devices oxidized at 1500°C having a forward voltage drop (VF) of 4.15 V and a differential on-resistance (Ron,diff) of 8.9 mΩ-cm2 at 100 A/cm2 and 25°C. Compared to typical control sample PiN diode characteristics, this equated to an improvement of 8% and 23% for VF and Ron,diff, respectively. From analysis of the reverse recovery characteristics, the carrier lifetime of the PiN diodes oxidized at 1500°C was found to be 1.05 μs, which was an improvement of around 30% compared to the control sample PiN diodes.

Keywords

devicesoxidationelectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1693: Symposium DD – Silicon Carbide‒Materials, Processing and Devices , 2014 , mrss14-1693-dd06-17
Copyright
Copyright © Materials Research Society 2014 

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