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Encapsulation of Silver Via Nitridation of Ag/Ti Bilayer Structures

Published online by Cambridge University Press:  15 February 2011

Y. L. Zou ,
T. L. Alford ,
D. Adams ,
T. Laursen ,
K.-N. Tu ,
R. Morton  and
S. S. Lau
Y. L. Zou
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, Tempe, AZ 85287-6006
T. L. Alford
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, Tempe, AZ 85287-6006
D. Adams
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, Tempe, AZ 85287-6006
T. Laursen
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704
K.-N. Tu
Affiliation:
Department of Materials Science and Engineering, UCLA, Los Angeles, CA 90095-1595
R. Morton
Affiliation:
Department of Electrical and Computer Engineering, UCSD, La Jolla, CA 92093
S. S. Lau
Affiliation:
Department of Electrical and Computer Engineering, UCSD, La Jolla, CA 92093
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Abstract

Ag/Ti bilayer films deposited on silicon dioxide substrates were annealed in ammonia ambient in the temperature range of 400 - 600 °C. Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy (AES) have shown that Ti segregates to both the surface to form a TiN(O) layer and to the Ti/SiO2 interface to form a Ti-oxide/Ti-silicide bilayer. The annealed bilayer structure had minimal Ti accumulations in Ag. Resistivity values of ˜2 μΩ-cm were obtained in encapsulated Ag bilayer films, which are comparable to that of the as-deposited. X-ray analysis confirmed the absence of intermetallic phase transformation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 355
Copyright
Copyright © Materials Research Society 1996

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References

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