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Encapsulation of Silver Via Nitridation of Ag/Ti Bilayer Structures

Published online by Cambridge University Press:  15 February 2011

Y. L. Zou ,
T. L. Alford ,
D. Adams ,
T. Laursen ,
K.-N. Tu ,
R. Morton  and
S. S. Lau
Y. L. Zou
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, Tempe, AZ 85287-6006
T. L. Alford
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, Tempe, AZ 85287-6006
D. Adams
Affiliation:
Department of Chemical, Bio and Materials Engineering, Arizona State University, Tempe, AZ 85287-6006
T. Laursen
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704
K.-N. Tu
Affiliation:
Department of Materials Science and Engineering, UCLA, Los Angeles, CA 90095-1595
R. Morton
Affiliation:
Department of Electrical and Computer Engineering, UCSD, La Jolla, CA 92093
S. S. Lau
Affiliation:
Department of Electrical and Computer Engineering, UCSD, La Jolla, CA 92093
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Abstract

Ag/Ti bilayer films deposited on silicon dioxide substrates were annealed in ammonia ambient in the temperature range of 400 - 600 °C. Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy (AES) have shown that Ti segregates to both the surface to form a TiN(O) layer and to the Ti/SiO2 interface to form a Ti-oxide/Ti-silicide bilayer. The annealed bilayer structure had minimal Ti accumulations in Ag. Resistivity values of ˜2 μΩ-cm were obtained in encapsulated Ag bilayer films, which are comparable to that of the as-deposited. X-ray analysis confirmed the absence of intermetallic phase transformation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 355
Copyright
Copyright © Materials Research Society 1996

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References

[1] lijima, T., Ono, H., Ninomiya, N., Ushiku, Y., Hatanaka, T., Nishiyama, A., and Iwai, H., Extended Abstracts, Conf. on Solid State Devices and Materials, Makuhari, 183 (1993).Google Scholar
[2] Sinclair, J. D., J. Electrochem. Soc.: Electrochem Sci. and Tech., Vol.129, No. 1, 1982 Google Scholar
[3] Alford, T. L., Adams, D., Laursen, T. and Ullrich, B. M., Appl. Phys. Lett., accepted, 1996 Google Scholar
[4] Li, J., Mayer, J. W., Shacham-Diamand, Y. and Colgan, E. G., Appl. Phys. Lett., 60 (1992) 2983 Google Scholar
[5] Li, J. and Mayer, J. W., Mater. Chem. Phys., 32 (1992) 1.Google Scholar
[6] Russell, S. W., Rafalski, S. A., Spreitzer, R. L., Li, J., Moinpur, M., Moghadam, F., Alford, T. L., Thin Solid Films, 262 (1995) 154.Google Scholar
[7] Adams, D., Alford, T. L., Theodore, N. D., Russell, S. W., Spreitzer, R. L., Mayer, J. W., Thin Solid Films, 262 (1995) 199.Google Scholar
[8] Doolittle, L. R., Nucl. Instrum. Methods B, 9 (1985) 344.Google Scholar
[9] Kittel, C., Introduction to Solid State Physics. 5th Edition, (John Wiley & Sons, New York 1976, p. 17 1.Google Scholar
[10] Binary Alloy Phase Diagrams, edited by Maisalski, Thaddeus B, (American Society for Metals, Metals park, OH 1986).Google Scholar