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Electronic Properties of RF Glow Discharge Intrinsic Microcrystalline Silicon near the Amorphous Silicon Phase Boundary

Published online by Cambridge University Press:  21 March 2011

James J. Gutierrez ,
Adam F. Halverson ,
Eric D. Tweeten ,
J. David Cohen ,
Baojie Yan ,
Jeffrey C. Yang  and
Subhendu Guha
James J. Gutierrez
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403 U.S.A.
Adam F. Halverson
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403 U.S.A.
Eric D. Tweeten
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403 U.S.A.
J. David Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403 U.S.A.
Baojie Yan
Affiliation:
United Solar Ovonic Corporation, 1100 W. Maple Road, Troy, MI 48084 U.S.A.
Jeffrey C. Yang
Affiliation:
United Solar Ovonic Corporation, 1100 W. Maple Road, Troy, MI 48084 U.S.A.
Subhendu Guha
Affiliation:
United Solar Ovonic Corporation, 1100 W. Maple Road, Troy, MI 48084 U.S.A.
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Abstract

The electronic properties of microcrystalline silicon have been characterized for the first time using transient photocapacitance spectroscopy (TPC) and drive-level capacitance profiling (DLCP). These methods were applied to microcrystalline films deposited by the RF glow discharge method at United Solar. The DLCP method allowed the shallow doping density to be profiled and the deep defect densities to be estimated. The TPC spectra were found to reveal that both a microcrystalline as well as an amorphous component are present in these samples. By varying the measurement temperature for these TPC spectra we were also able to directly monitor the degree of minority carrier collection in these films. Significant effects due to light soaking on the TPC spectral properties were also observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A8.9
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Meier, J., Flückiger, R., Keppner, H., and Shah, A., J. Appl. Phys., 65, 860 (1994).Google Scholar
2.See, for example, Tawada, Y., Yamagishi, H. and Yamamoto, K., Sol. Energy Mat. and Sol. Cells, 78, 647 (2003).Google Scholar
3. Torres, P., Meier, J, Flückiger, R., Kroll, U., Selvan, J. A. Anna, Keppner, H., and Shah, A., J. Appl. Phys., 69, 2286 (1996)Google Scholar
4. Yan, B., Yue, G., Yang, J., Guha, S., Williamson, D. L., Han, D. and Jiang, C.S., Mat. Res. Soc. Symp. A, 2004, to be publishedGoogle Scholar
5. Vanecek, M., Poruba, A., Remeŝ, Z., Beck, N., and Nesládek, M., J. Non-Cryst. Solids 227–230, 967 (1998).Google Scholar
6. Bronner, W., Mehring, M., and Brüggemann, R., Phys. Rev. B65, 165212 (2002).Google Scholar
7. Vanecek, M. and Poruba, A., Appl. Phys. Lett. 80, 719 (2002).Google Scholar
8. Shah, A.V., Meier, J., Vallat-Sauvain, E., Wyrsch, N., Kroll, U., Droz, C., Graf, U., Sol. Energy Mat. Sol. Cells, 78, 469 (2003)Google Scholar
9. Michelson, C. E., Gelatos, A. V., and Cohen, J. D., J. Appl. Phys. Lett. 47, 412 (1985).Google Scholar
10. Gelatos, A.V., Mahavadi, K.K., Cohen, J.D., and Harbison, J.P., Appl. Phys. Lett. 53, 403 (1988).Google Scholar
11. Park, H-R., Kwon, D., and Cohen, J.D., J. Appl. Phys. 83, 8051 (1998).Google Scholar
12. Guha, S., Yang, J., Williamson, D.L., Lubianiker, Y., Cohen, J.D., and Mahan, A.H., Appl. Phys. Lett. 74, 1860 (1999).Google Scholar