Hostname: page-component-848d4c4894-pjpqr Total loading time: 0 Render date: 2024-07-02T23:34:01.039Z Has data issue: false hasContentIssue false

Electron Emission From Diamond and Carbon Nitride Grown by Hot Filament Cvd or Helical Resonator Pecvd

Published online by Cambridge University Press:  10 February 2011

Eung Joon Chi
Affiliation:
Department of Metallurgical Engineering, Yonsei Univ., Seoul 120-749, Korea
Jae Yeob Shim
Affiliation:
Department of Metallurgical Engineering, Yonsei Univ., Seoul 120-749, Korea
Soon Joon Rho
Affiliation:
Department of Metallurgical Engineering, Yonsei Univ., Seoul 120-749, Korea
Hong Koo Baik
Affiliation:
Department of Metallurgical Engineering, Yonsei Univ., Seoul 120-749, Korea
Get access

Abstract

To improve silicon field emitters, diamond and carbon nitride coatings were applied by hot filament CVD and helical resonator CVD, respectively. Helical resonator CVD was first proposed as a new method to grow carbon nitride on silicon tips without damage. Diamond and carbon nitride coatings lowered turn-on voltage and increased emission current. Microstructural and electronic investigations of carbon nitride film were performed. The negative electron affinity of carbon nitride is suggested for enhancing emission current.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Himpsel, F. J., knapp, I. A., Vechten, J. A. Van and Eastman, S. E., Phys. Rev., B(20), p. 624 (1979)Google Scholar
2. Wang, C., Garcia, A., Ingram, D. C., Lake, M. and Kordesch, M. E., Electronics Lett., 27, p. 1459(1991)Google Scholar
3. Geis, M. W., Twichell, J. C., Bozler, C. O., Rathman, D. D., Efremow, N. N., Krohn, K. E., Hollis, M. A., Uttaro, R. and Lyszcarz, T. M., Abs. 6th Int. Conf. Vacuum Microelectronics, p. 160 (1993)Google Scholar
4. Liu, A. Y. and Cohen, M. L., Phys. Rev., B(41), p. 10727 (1990)Google Scholar
5. Cook, J. M., Ibbotson, D. E. and Flamm, D. L., J. Vac. Sci. Technol., B(8), p. 1 (1990)Google Scholar
6. Givargizov, E. I., J. Vac. Sci. Technol., B(11), p. 449 (1993)Google Scholar
7. Givargizov, E. I., J. Vac. Sci. Technol., B(13), p. 414 (1995)Google Scholar
8. Hong, D. and Aslam, M., J. Vac. Sci. Technol., B(13), p. 427 (1995)Google Scholar