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Electron Emission From Diamond and Carbon Nitride Grown by Hot Filament Cvd or Helical Resonator Pecvd

Published online by Cambridge University Press:  10 February 2011

Eung Joon Chi ,
Jae Yeob Shim ,
Soon Joon Rho  and
Hong Koo Baik
Eung Joon Chi
Affiliation:
Department of Metallurgical Engineering, Yonsei Univ., Seoul 120-749, Korea
Jae Yeob Shim
Affiliation:
Department of Metallurgical Engineering, Yonsei Univ., Seoul 120-749, Korea
Soon Joon Rho
Affiliation:
Department of Metallurgical Engineering, Yonsei Univ., Seoul 120-749, Korea
Hong Koo Baik
Affiliation:
Department of Metallurgical Engineering, Yonsei Univ., Seoul 120-749, Korea
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Abstract

To improve silicon field emitters, diamond and carbon nitride coatings were applied by hot filament CVD and helical resonator CVD, respectively. Helical resonator CVD was first proposed as a new method to grow carbon nitride on silicon tips without damage. Diamond and carbon nitride coatings lowered turn-on voltage and increased emission current. Microstructural and electronic investigations of carbon nitride film were performed. The negative electron affinity of carbon nitride is suggested for enhancing emission current.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 375
Copyright
Copyright © Materials Research Society 1997

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References

1. Himpsel, F. J., knapp, I. A., Vechten, J. A. Van and Eastman, S. E., Phys. Rev., B(20), p. 624 (1979)Google Scholar
2. Wang, C., Garcia, A., Ingram, D. C., Lake, M. and Kordesch, M. E., Electronics Lett., 27, p. 1459(1991)Google Scholar
3. Geis, M. W., Twichell, J. C., Bozler, C. O., Rathman, D. D., Efremow, N. N., Krohn, K. E., Hollis, M. A., Uttaro, R. and Lyszcarz, T. M., Abs. 6th Int. Conf. Vacuum Microelectronics, p. 160 (1993)Google Scholar
4. Liu, A. Y. and Cohen, M. L., Phys. Rev., B(41), p. 10727 (1990)Google Scholar
5. Cook, J. M., Ibbotson, D. E. and Flamm, D. L., J. Vac. Sci. Technol., B(8), p. 1 (1990)Google Scholar
6. Givargizov, E. I., J. Vac. Sci. Technol., B(11), p. 449 (1993)Google Scholar
7. Givargizov, E. I., J. Vac. Sci. Technol., B(13), p. 414 (1995)Google Scholar
8. Hong, D. and Aslam, M., J. Vac. Sci. Technol., B(13), p. 427 (1995)Google Scholar