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Electromigration Reliability of Dual-Damascene Cu/Oxide Interconnects

Published online by Cambridge University Press:  17 March 2011

Ennis T. Ogawa ,
Volker A. Blaschke ,
Alex Bierwag ,
Ki-Don Lee ,
Hideki Matsuhashi ,
David Griffiths ,
Anup Ramamurthi ,
Patrick R. Justison ,
Robert H. Havemann  and
Paul S. Ho
Ennis T. Ogawa
Affiliation:
Interconnect and Packaging Laboratory, Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712-1100
Volker A. Blaschke
Affiliation:
SEMATECH, 2706 Montopolis Dr. Austin, TX 78741-6499
Alex Bierwag
Affiliation:
Interconnect and Packaging Laboratory, Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712-1100
Ki-Don Lee
Affiliation:
Interconnect and Packaging Laboratory, Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712-1100
Hideki Matsuhashi
Affiliation:
Interconnect and Packaging Laboratory, Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712-1100
David Griffiths
Affiliation:
SEMATECH, 2706 Montopolis Dr. Austin, TX 78741-6499
Anup Ramamurthi
Affiliation:
Interconnect and Packaging Laboratory, Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712-1100
Patrick R. Justison
Affiliation:
Interconnect and Packaging Laboratory, Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712-1100
Robert H. Havemann
Affiliation:
SEMATECH, 2706 Montopolis Dr. Austin, TX 78741-6499
Paul S. Ho
Affiliation:
Interconnect and Packaging Laboratory, Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78712-1100
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Abstract

An electromigration study has determined the lifetime characteristics and failure mode of dual-damascene Cu/oxide interconnects at temperatures ranging between 200 and 325 °C at a current density of 1.0 MA/cm2. A novel test structure design is used which incorporates a repeated chain of “Blech-type” line elements. The large interconnect ensemble permits a statistical approach to addressing interconnect reliability issues using typical failure analysis tools such as focused ion beam imaging. The larger sample size of the test structure thus enables efficient identification of “early failure” or extrinsic modes of interconnect failure associated with process development. The analysis so far indicates that two major damage modes are observable: (1) via-voiding and (2) voiding within the damascene trench.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D2.3.1
Copyright
Copyright © Materials Research Society 2000

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