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Electromigration in Al/W and Al(Cu)/W Interconnect Structures

Published online by Cambridge University Press:  15 February 2011

C-K. Hu ,
P. S. Ho ,
M. B. Small  and
K. Kelleher
C-K. Hu
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
P. S. Ho
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
M. B. Small
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
K. Kelleher
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The electromigration drift velocity of Al in Al(3wt.% Si), Al(2wt.%Cu), and Al(2wt.%Cu,3wt.%Si) was measured in a temperature range 133 to 220 °C with current densities of 1.0 to 1.5×106A/cm2. In Al(3wt.% Si), a significant Al depletion at the cathode end and accumulation at the anode end of stripe were observed within a few hours at 1.5×106A/cm2 and 200°C. In addition, local hillocks and voids along the metal lines were observed. For Al(Cu,Si), the Al drift velocity was slowed down by Cu addition. The majority of hillocks started to grow at a distance about 6 μm away from the cathode end with current density of 1.5×106 A/cm2. The drift velocity of Al in Al(Cu,Si) was found to be a function of time starting with an initial low value and increasing to a an final steady-state value. The behavior was attributed to the migration of Cu and dissolution of Al2Cu precipitates. The activation energies of the depletion 3 Aμm of Al(2%,Cu, 3%Si) was determined to be 0.90±02 eV. The dissolution and growth of A12Cu in the tested samples of Ti/Al(2%Cu)/Ti/TiN were observed using the scanning electron microscope and an electron microprobe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 99
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Ho, P.S. and Kwok, T., Rep. Progr. Phys. 52, 301 (1989).Google Scholar
2. See, for example, d'Heurle, F. and Rosenberg, R., Phys. Thin Films, 7, 257 (1973).Google Scholar
3. Blech, I.A. and Kinsborn, E., Thin Solid Film, 25, 327 (1975).Google Scholar
4. Blech, I.A., J. Appl. Phys. 47, 1203 (1976).Google Scholar
5. Ross, C.A., Drewery, J.S., Somekh, R.E., and Evetts, J.E., J Electronic Mat. 19, 911 (1990).Google Scholar
6. Shreiber, H.-U., Thin Solid Films, 175, 29 (1989).Google Scholar
7. Koleshko, V.M. and Viryushin, I.V., Thin Solid Films, 192, 181 (1990).Google Scholar
8. Schreober, H.-U., Solid-State Electronics, 28, 617 (1985).Google Scholar
9. Moy, D.,Wang, L.K.,Seeger, D.E., Silverman, J.P., Hu, C-K., Kauman, F., Ray, A., and Mazzeo, N., Tech. Dig. of 1990 Smp. on VLSI Technol., Honolulu, HA, p.9 (1990).Google Scholar