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Electromigration Characteristics Under High Frequency Pulsed Current Stressing

Published online by Cambridge University Press:  15 February 2011

Thomas Kwok ,
R. Kaufman  and
B. Davari
Thomas Kwok
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598.
R. Kaufman
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598.
B. Davari
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598.
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Abstract

Electromigration characteristics of Al lines under pulsed current stressing at frequencies 50–200 MHz were measured. Lifetime was found to depend explicitly on both current on-time and current off period. Lifetime increases with t-off as t50 ∝ (t-off)2.2 and decreases with t-on as t50 ∝ (t-on)−0.7. The data indicate no threshold frequency for drastic change in lifetime. Lifetime was also found to increase with duty cycle as t50 ∝ r−2.7, which is a remarkable improvement over an average current density model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 85
Copyright
Copyright © Materials Research Society 1991

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References

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