Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-19T06:44:04.267Z Has data issue: false hasContentIssue false
  • English
  • Français

Electromagnetic Induction Heating for the 70 nm Node

Published online by Cambridge University Press:  01 February 2011

Keith Thompson ,
John H. Booske ,
R.F. Cooper  and
Y.B. Gianchandani
Keith Thompson
Affiliation:
University of Wisconsin, Madison 53706
John H. Booske
Affiliation:
University of Wisconsin, Madison 53706
R.F. Cooper
Affiliation:
University of Wisconsin, Madison 53706
Y.B. Gianchandani
Affiliation:
University of Michigan, Ann Arbor
Get access

Abstract

Electromagnetic heating provides a novel alternative to “illumination-based” rapid thermal processing techniques. Exposure to radiation, in the RF and microwave frequency regimes, rapidly heats silicon (∼125°C/sec) to temperatures in excess of 1000°C without the use of a susceptor. These ramp rates make this technology suitable for the activation of shallow implanted dopants, and satisfaction of the 100 nm technology node has been achieved. Furthermore, the presence of high frequency electric fields creates ponderomotive forces that may alter the kinetics of dopant activation and diffusion. These additional driving forces could, once fully understood, lead to an enhanced activation mechanism that activates sufficient dopants to satisfy the 70 nm technology node at temperatures less than 1000°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C1.3
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.www.sematech.orgGoogle Scholar
2. Lerch, W., Bayha, B., Downey, D.F., Arevalo, E.A., “State of the art techniques for Ultra-Shallow junction Formation,” in Rapid Thermal and Other Short-Time Processing Technologies II, p. 321 of Proceedings of the 199th meeting of the Electrochemical Society, 25 March 2001, Washington DC. Google Scholar
3. Thompson, K., Booske, J. H., Cooper, R.F., Gianchandani, Y.B., Downey, D. F., “RF and Microwave Annealing for Ultra Shallow Junction Formation,” in Rapid Thermal and Other Short-Time Processing Technologies II, p. 121 of Proceedings of the 199th Meeting of the Electrochemical Society, 25 March 2001, Washington DC. Google Scholar
4. Booske, J.H., Cooper, R.F., Freeman, S.A., Rybakov, K. I., Semenov, V.E., ’Microwave ponderomotive forces in solid-state ionic plasmas,” Phys. Rev. B, vol. 55 p. 3559–3567. (1997)Google Scholar
5. Thompson, K., Gianchandani, Y.B., Booske, J.H., Cooper, R.F., “Direct Si-Si Bonding by Electromagnetic Induction Heating,” Journal of Micro-Electro-Mechanical Systems. Accepted for publication. (April 2002)Google Scholar
6. Thompson, K., Booske, J.H., Gianchandani, Y.B., Cooper, R.F., Bykov, Y., Eremeev, A., Plotnikov, I., “Electromagnetic Induction Heating for Cold Wall Rapid Thermal Processing,” in Proceedings of the 9th International Conference on RTP, IEEE, September 2001, Anchorage Alaska.Google Scholar
7. Downey, D.F., Falk, S. W., Marcus, S.D., Proc. of 7TH International Conference on Advanced Thermal Processing of Semiconductors. pp. 229–236 (1999)Google Scholar
8 Tichy, R.S., Elliott, K., McCoy, S., Sing, D.C., “Annealing of Ultra-Shallow Implanted Junctions Using Arc-Lamp Technology: Achieving the 90 nm Node,” 9th International Conference on Advanced Thermal Processing of Semiconductors, IEEE RTP 2001, p. 82, Anchorage, Alaska. (25–29 Sept. 2001)Google Scholar