Hostname: page-component-669899f699-chc8l Total loading time: 0 Render date: 2025-04-30T05:35:05.906Z Has data issue: false hasContentIssue false
  • English
  • Français

The Electrical Properties of Polyoxide Depending on the Polycrystalline-Si Formation Conditions

Published online by Cambridge University Press:  21 February 2011

Kyoung-Soo Yi ,
Deok-Ho Cho ,
Jeong Yong Lee ,
Kee-Soo Nam ,
Sang-Won Kang  and
Jin-Hyo Lee
Kyoung-Soo Yi
Affiliation:
IC DEVELOPMENT DEPT., ETRI, P.O.BOX 8, DAEDOG-DANJI, DAEJEON 305-606, KOREA
Deok-Ho Cho
Affiliation:
IC DEVELOPMENT DEPT., ETRI, P.O.BOX 8, DAEDOG-DANJI, DAEJEON 305-606, KOREA
Jeong Yong Lee
Affiliation:
DEPT. OF MATERIALS SCIENCE AND ENGINEERING, KAIST, DAEJEON 305-701, KOREA
Kee-Soo Nam
Affiliation:
IC DEVELOPMENT DEPT., ETRI, P.O.BOX 8, DAEDOG-DANJI, DAEJEON 305-606, KOREA
Sang-Won Kang
Affiliation:
IC DEVELOPMENT DEPT., ETRI, P.O.BOX 8, DAEDOG-DANJI, DAEJEON 305-606, KOREA
Jin-Hyo Lee
Affiliation:
IC DEVELOPMENT DEPT., ETRI, P.O.BOX 8, DAEDOG-DANJI, DAEJEON 305-606, KOREA
Get access

Abstract

Prior to growth of polyoxide, amorphous-Si with a cap of low temperature oxide was annealed to improve the dielectric property of polyoxide. Current-electric field, critical electric field, critical electric field histogram, and Fowler-Nordheim conduction plot were evaluated. The interface of polyoxide and poly-Si was observed with a transmission electron microscope. The annealing of the amorphous-Si prior to oxidation was effective to improve the dielectric property of the polyoxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 315
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. DiMaria, D. and Kerr, D., Appl. Phys. Lett. 27 (9), 505 (1975).Google Scholar
2. Anderson, R. and Kerr, D., J. Appl. Phys. 48 (11), 4834 (1977).10.1063/1.323510Google Scholar
3. Irene, E., Tierny, E., and Dong, D., J. Electrochem. Soc. 127 (3), 705 (1980).Google Scholar
4. Huff, H., Halvorson, R., Chiu, T., and Guterman, D., 127(11), 2482 (1980).10.1149/1.2129501Google Scholar
5. Sternheim, M., Kinsbron, E., Alspector, J., and Heimann, P., J. Electrochem. Soc. 130 (8), 1735 (1983).10.1149/1.2120072Google Scholar
6. Heimann, P., Murarka, S., and Sheng, T., J. Appl. Phys. 53(9), 6240 (1982).Google Scholar
7. Brown, D. and Barile, C., J. Electrochem. Soc. 130, 1597 (1983).10.1149/1.2120041Google Scholar
8. Marcus, R., Sheng, T., and Lin, P., J. Electrochem. Soc. 129, 1282 (1982).Google Scholar
9. Faraone, L., Vibronek, R., and McGinn, J., IEEE Trans. Electron Devices ED32, 577(1985).Google Scholar
10. Conti, M., Corda, G., and Gastaldi, R., in Insulating Films on Semiconductors, edited by Roberts, G.G. (Inst. of Physics J., 1980), pp. 55–61.Google Scholar
11. Harbeke, G., Krausbauer, L., Steigmeir, E., Widmer, A., Kappert, H., and Neugebauer, G., RCA Rev. 44, 287(1983).Google Scholar
12. Duffy, M, McGinn, J., Shaw, J., Smith, R., Soltis, R., and Harbeke, G., J. Electrochem. Soc. 44., 313–325 (1983).Google Scholar
13. Shinada, K., Mori, S., and Mikata, Y., J. Electrochem. Soc. 132 (9), 2185 (1988).Google Scholar
14. Lenzlinger, M. and Snow, E., J. Appl. Phys. 40, 278 (1969).10.1063/1.1657043Google Scholar