Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-29T07:27:30.006Z Has data issue: false hasContentIssue false

Electrical Properties of Crystalline and Amorphous Pb(ZrxTi1−x)O3 Thin Films Prepared by the Sol-Gel Technique

Published online by Cambridge University Press:  25 February 2011

Yuhuan Xu
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, CA 90025
Chih-Hsing Cheng
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, CA 90025
Ren Xu
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, CA 90025
John D. Mackenzie
Affiliation:
Department of Materials Science and Engineering, University of California, Los Angeles, CA 90025
Get access

Abstract

Pb(ZrxTi1−x)O3 (PZT) solutions were prepared by reacting lead 2-ethylhexanoate with titanium n-propoxide and zirconium n-propoxide. Films were deposited on several kinds of metal substrate by dip-coating. Crystalline PZT films and amorphous PZT films were heat-treated for 1 hour at 650°C and at 400°C, respectively. Electrical properties including dielectric, pyroelectric and ferroelectric properties of both crystalline and amorphous PZT films were measured and compared. The amorphous PZT thin films exhibited ferroelectric-like behaviors.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Myers, E. R. and Kingon, A. I. (editors), Feroelectric thin films, (Mater. Res. Soc. Proc. 200. Pittsburgh, PA, 1990).Google Scholar
2. Xu, Yuhuan and Mackenzie, John D., Integrated Ferroelectrics, 1, 17 (1992).Google Scholar
3. Xu, Ren, Xu, Yuhuan and Mackenzie, J. D., presented at the 3rd International Symposium on Integrated Ferroelectrics, Colorado Springs, Colorado, 1991 (to be published in Ferroelectrics).Google Scholar
4. Xu, Yuhuan, Ferroelectric Materials and Their Applications, 1 st ed. (North-Holland Elsevier Science Publishers, Amsterdam, 1991) p. 101.Google Scholar
5. Dey, Sandwip K. and Rainer Zuleeg, Ferroelectrics, 108, 37 (1990).Google Scholar
6. Dana, S. S., Etzold, K. F. and Clabes, J., J. Appl. Phys., 69, 4398 (1991).Google Scholar
7. Tohge, Noboru, Takahashi, Satoshi and Minami, Tsutomu, J. Am. Ceram. Soc, 74, 67 (1991).CrossRefGoogle Scholar
8. Udayakumar, K. R., Bart, S. F., Flynn, A. M., Chen, J., Tavrow, L. S., Cross, L. E., Brooks, R. A. and Ehrlich, D. J., in Proc. IEEE Micro Electro Mechanical Systems, (Nara. Japan, 30 Jan.--2 Feb. 1991), p. 109.Google Scholar
9. Chen, K. C., Janah, A. and Mackenzie, J. D., in Better Ceramics Through Chemistry II, edited by Brinker, C. J., Clark, D. E. and Ulrich, D. R., (Mater. Res. Soc. Proc, 73, Pittsburgh, PA, 1986), p. 731.Google Scholar
10. Lipeles, R. A., Coleman, D. J. and Leung, M. S., in Better Ceramics Through Chemistry II, edited by Brinker, C. J., Clark, D. E. and Ulrich, D. R., (Mater. Res. Soc. Proc, 73, Pittsburgh, PA, 1986), p. 665.Google Scholar
11. Bunget, I. and Popescu, M., Physics of Solid Dielectrics, 1 st ed. (Elsevier Science Publishers, Amsterdam, 1984), p. 316.Google Scholar
12. Smolensku, G. A. (Editor-in-Chief), Ferroelectrics and Related Materials, 1st ed. (Gordon and Breach Science Publishers, New York, 1984), p. 443.Google Scholar