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Electrical Performance Of an N-Channel TFT Fabricated on a Quartz Substrate by ZMR

Published online by Cambridge University Press:  10 February 2011

Si-Woo Leeo ,
Seung-Ki Joo ,
Byung-Il Lee  and
In-Gon Lim
Si-Woo Leeo
Affiliation:
Basic Research Team, Samsung Electronic Co. Ltd., 449-900
Seung-Ki Joo
Affiliation:
Electronic Material Laboratory, Dept. of Metall. Eng., Seoul Nat'l Univ., Seoul, 151-74
Byung-Il Lee
Affiliation:
Electronic Material Laboratory, Dept. of Metall. Eng., Seoul Nat'l Univ., Seoul, 151-74
In-Gon Lim
Affiliation:
Device and Material Laboratory, LG Electronics Research Center, Seoul, 137-140
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Abstract

Single crystalline silicon thin films were formed on a transparent quartz substrate by zone melting recrystallization for the application of flat panel display. The recrystallized film shows a perfect (100) texture and the main defects are subgrainboundaries. High residual tensile stress, which can cause the film cracking, can be successfully eliminated by post-annealing. The nchannel thin film transistors fabricated on a recrystallized film showed excellent device characteristics: carrier mobility ˜ 420cm2/Vsec, subthreshold slope ˜ 100mV/dec and off-state leakage current < 0.2pA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 153
Copyright
Copyright © Materials Research Society 1997

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