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Electrical Characterization of Residual Implantation-Induced Defects in the Vicinity of Laser-Annealed Implanted Ultrashallow Junctions

Published online by Cambridge University Press:  01 February 2011

V. Gonda ,
S. Liu ,
T.L.M. Scholtes  and
L.K. Nanver
V. Gonda
Affiliation:
[email protected], Delft University of Technology, DIMES-ECTM, Feldmannweg 17, Delft, N/A, 2628 CT Delft, Netherlands, +31 15 278 8837, +31 15 262 2163
S. Liu
Affiliation:
[email protected], Delft University of Technology, DIMES-ECTM, POB 5053, Delft, N/A, 2600 GB, Netherlands
T.L.M. Scholtes
Affiliation:
[email protected], Delft University of Technology, DIMES-ECTM, POB 5053, Delft, N/A, 2600 GB, Netherlands
L.K. Nanver
Affiliation:
[email protected], Delft University of Technology, DIMES-ECTM, POB 5053, Delft, N/A, 2600 GB, Netherlands
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Abstract

Ultrashallow junctions (USJ) were created by tilted 5 keV As+ implantation to a dose of 3x1015 cm−2 followed by excimer laser annealing (ELA). Sheet resistance and capacitances were measured in the background layer below the USJ. Results showed that sheet resistance was dependent on the laser energies in the close vicinity of these diodes. Doping profiles extracted from the capacitances indicated electrical deactivation here caused by the residual implantation defects. The extent and location of the residual damage is shown to be strongly dependent on the implantation dose and tilt angles, and also influenced by the laser annealing.

Keywords

defectslaser annealingion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C05-02
Copyright
Copyright © Materials Research Society 2006

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