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The Electrical Characterization of Molecular-Beam-Deposited LaAlO3 on GaAs and its Annealing Effects

Published online by Cambridge University Press:  01 February 2011

Donghun Choi
Affiliation:
[email protected], Stanford University, Electrical Engineering, 126X Via Ortega, Stanford, CA, 94305, United States, 650-725-8313, 650-723-4659
Maitri Warusawithana
Affiliation:
[email protected], Pennsylvania State University, Materials Science and Engineering, University Park, PA, 16802-5005, United States
Chi On Chui
Affiliation:
[email protected], University of California, Los Angeles, Electrical Engineering, Los Angeles, CA, 90095, United States
Joseph Chen
Affiliation:
[email protected], Stanford University, Materials Science and Engineering, Stanford, CA, 94305, United States
Wilman Tsai
Affiliation:
[email protected], Intel Corporation, Santa Clara, CA, 95052, United States
Darrell G. Schlom
Affiliation:
[email protected], Pennsylvania State University, Materials Science and Engineering, University Park, PA, 16802-5005, United States
James S. Harris
Affiliation:
[email protected], Stanford University, Electrical Engineering, Stanford, CA, 94305, United States
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Abstract

The electrical properties of Al/LaAlO3/GaAs metal-oxide-semiconductor capacitors were investigated. A thick arsenic (As2) capping layer was used to protect the GaAs from oxidation and contamination during the air exposure that occurred between the deposition of the GaAs and LaAlO3 layers in different molecular-beam epitaxy systems. Amorphous LaAlO3 was deposited on c(4×4)- and (2×4)-reconstructed (100) GaAs surfaces. Post dielectric deposition annealing was found to improve the capacitance-voltage (C-V) characteristics by eliminating frequency dispersion in the depletion and weak inversion regimes and diminished the bi-directional C-V hysteresis to 210 mV. Reasonably low gate leakage current was maintained after annealing.

Keywords

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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