Published online by Cambridge University Press: 21 March 2011
This paper reports structural and electrical properties of catalytic-nitrided silicon dioxide (SiO2) films. The surface of SiO2/Si(100) was nitrided at temperatures below 573 K. It was found that the incorporated N atoms are bound to Si atoms and O atoms and located on the top-surface of SiO2. Catalytic-nitrided SiO2 films have small amounts of Si-OH bonds and adequate resistance to boron (B) penetration.