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Electrical and Structural Properties of Catalytic-Nitrided SiO2 Films

Published online by Cambridge University Press:  21 March 2011

Akira Izumi ,
Hidekazu Sato  and
Hideki Matsumura
Akira Izumi
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology) Ishikawa 923-1292, JAPAN
Hidekazu Sato
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology) Ishikawa 923-1292, JAPAN
Hideki Matsumura
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology) Ishikawa 923-1292, JAPAN
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Abstract

This paper reports structural and electrical properties of catalytic-nitrided silicon dioxide (SiO2) films. The surface of SiO2/Si(100) was nitrided at temperatures below 573 K. It was found that the incorporated N atoms are bound to Si atoms and O atoms and located on the top-surface of SiO2. Catalytic-nitrided SiO2 films have small amounts of Si-OH bonds and adequate resistance to boron (B) penetration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 670: Symposium K – Gate Stack and Sillicide Issues in Silicon , 2001 , K7.8
Copyright
Copyright © Materials Research Society 2001

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References

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