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The Effects of Width Transitions on the Reliability of Interconnects

Published online by Cambridge University Press:  17 March 2011

C. S. Hau-Riege ,
C.V. Thompson  and
T.N. Marieb
C. S. Hau-Riege
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
C.V. Thompson
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
T.N. Marieb
Affiliation:
Intel Corporation, Portland, OR 97124
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Abstract

Experimental and modeling studies of Al-based interconnects with narrow-to-wide transitions show that the width transition is a site of atomic flux divergence due to the discontinuity in diffusivities between the narrow and wide segments, which have different microstructures. Lifetimes have been experimentally determined for populations of lines with width transitions, which have varying line-width ratios and varying locations of the width transitions with respect to the line end. The electromigration failure rate is increased as the width-transition is moved closer to the electron-source via. Correlation of the effects width transitions on lifetimes allows determination of the critical stress range for void -nucleation failure, which was found to be 600 ± 108 MPa.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D2.8.1
Copyright
Copyright © Materials Research Society 2000

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