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Effects of Size and Shape of Lateral Confinement on the Formation of NiSi2, CoSi2 and TiSi2 on Silicon Inside Miniature Size Oxide Openings

Published online by Cambridge University Press:  15 February 2011

L. J. Chen ,
J. Y. Yew ,
S. L. Cheng ,
K. M. Chen ,
K. Nakamura  and
B. Y. Tsui
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
J. Y. Yew
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
S. L. Cheng
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
K. M. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
K. Nakamura
Affiliation:
National Nano Device Laboratory, Hsinchu, Taiwan, Republic of China
B. Y. Tsui
Affiliation:
Electronics Service and Research Organization, Hsinchu, Taiwan, Republic of China
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Abstract

The effects of size and shape of lateral confinement on the formation of NiSi2, CoSi2 and TiSi2 on silicon inside miniature size oxide openings have been investigated. Epitaxial growth of NiSi2 of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside both contact holes and linear openings of 0.3 μm or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi2 of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2 on (111)Si are correlated with the stress level inside oxide openings. The faceting of CoSi2 was found to occur at a lower temperature inside oxide openings of smaller size. C49-C54 TiSi2 transformation was observed to be more difficult on both blank and BF2+ implanted (001)Si inside smaller size oxide openings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 499
Copyright
Copyright © Materials Research Society 1996

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