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Effects of Facet Growth and Nucleation on Microcrystalline Silicon by Numerical Model

Published online by Cambridge University Press:  21 March 2011

Yasuyuki Kobayashi  and
Koji Satake
Yasuyuki Kobayashi
Affiliation:
Advanced Technology Research Center, Mitsubishi Heavy Industries, Ltd. 1-8-1, Sachiura, Kanazawa-ku, Yokohama 236-8515, Japan.
Koji Satake
Affiliation:
Advanced Technology Research Center, Mitsubishi Heavy Industries, Ltd. 1-8-1, Sachiura, Kanazawa-ku, Yokohama 236-8515, Japan.
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Abstract

We have presented a model of microcrystalline silicon (μc-Si) growth based on the Van der Drift model. The model needs growth velocities of the facets (100) and (111), an amorphous silicon growth velocity and a grain nucleation rate. The growth velocity ratio of the facets, (100) and (111), determines the preferred orientation and the morphology of the μc-Si film, especially oriented to (110). As the grain nucleation rate increases, the ratio of the living grain number to the total grain number decreases and the crystallinity increases, so the grain nucleation rate governs the trade-off relation of the μc-Si cells between decreasing the open circuit voltage and increasing the short circuit current as the crystallinity increases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A9.29
Copyright
Copyright © Materials Research Society 2004

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References

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